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pro vyhledávání: '"Garcia, Ivan A."'
As Artificial Intelligence systems become integral across domains, the demand for explainability grows. While the effort by the scientific community is focused on obtaining a better explanation for the model, it is important not to ignore the potenti
Externí odkaz:
http://arxiv.org/abs/2404.02611
Publikováno v:
Solar Energy Materials and Solar Cells, Volume 248, 2022, 112000, ISSN 0927-0248
The growth of heavily doped tunnel junctions in inverted metamorphic multijunction solar cells induces a strong diffusion of Zn via a point-defects-assisted mechanism. The redistribution of Zn can compensate the n-type doping in the emitter of the Ga
Externí odkaz:
http://arxiv.org/abs/2211.14277
Explainable artificial intelligence is proposed to provide explanations for reasoning performed by an Artificial Intelligence. There is no consensus on how to evaluate the quality of these explanations, since even the definition of explanation itself
Externí odkaz:
http://arxiv.org/abs/2211.06154
Autor:
Garcia, Ivan Gonzalez, Castro, Jesus Jeronimo, Hernandez, Diana Janett Verdusco, Amaya, Efren Morales
In this paper we proved the following: \emph{Let $K, L\subset \mathbb R^3$ be two $O$-symmetric convex bodies with $L\subset \emph{int} K$ strictly convex. Suppose that from every $x$ in $\emph{bd} K$ the graze $\Sigma(L,x)$ is a planar curve and $K$
Externí odkaz:
http://arxiv.org/abs/2207.13294
We study the crossing time statistic of diffusing point particles between the two ends of expanding and narrowing two-dimensional conical channels under a transverse external gravitational field. The theoretical expression for the mean first-passage
Externí odkaz:
http://arxiv.org/abs/2206.10116
Autor:
Caño, Pablo, Hinojosa, Manuel, Cifuentes, Luis, Nguyen, Huy, Morgan, Aled, Marrón, David Fuertes, García, Iván, Johnson, Andrew, Stolle, Ignacio Rey
Publikováno v:
2019 IEEE 46th Photovoltaic Specialists Conference (PVSC), 2019, pp. 2513-2518
A tandem GaAsP/SiGe solar cell has been developed employing group-IV reverse buffer layers grown on silicon substrates with a subsurface porous layer. Reverse buffer layers facilitate a reduction in the threading dislocation density with limited thic
Externí odkaz:
http://arxiv.org/abs/2205.12664
Publikováno v:
2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)
Zinc-diffusion can induce multiple failures in the electrical performance of a multijunction solar cell. In this work, we show an important Zn-diffusion from the AlGaInP back-surface-field layer to the emitter of the GaInP top cell of an inverted mul
Externí odkaz:
http://arxiv.org/abs/2205.07606
Autor:
Martín, Pablo, Orejuela, Víctor, Cano, Aitana, García, Iván, Luque, Antonio, Rey-Stolle, Ignacio
Publikováno v:
In Cell Reports Physical Science 16 October 2024 5(10)
Publikováno v:
In Computer Standards & Interfaces January 2025 91
Autor:
Ma, Chao, Sánchez-García, Iván, Wang, Runze, Galán, Hitos, Denkova, Antonia G., Serra Crespo, Pablo
Publikováno v:
In Separation and Purification Technology 1 January 2025 352