Metamorphic Ga0.76In0.24As/GaAs0.75Sb0.25 tunnel junctions grown on GaAs substrates.

Autor: Garcĺa, I., Geisz, J. F., France, R. M., Kang, J., Wei, S.-H., Ochoa, M., Friedman, D. J.

Publikováno v: Journal of Applied Physics; 2014, Vol. 116 Issue 7, p074508-1-074508-6, 6p, 1 Diagram, 1 Chart, 4 Graphs