Výsledky vyhledávání - "Gaoqiang Deng"

Akademický článek

1.2‐kV silicon carbide planar split‐gate MOSFET with source field plate for superior figure‐of‐merits

Autor: Hengyu Yu, Jun Wang, Shiwei Liang, Gaoqiang Deng, Hangzhi Liu, Bing Ji, Z. John Shen

Publikováno v: IET Power Electronics, Vol 15, Iss 14, Pp 1502-1510 (2022)

Abstract Planar split‐gate MOSFETs (SG‐MOSFETs) are promising in high‐frequency power applications due to the fast turn on/off speeds and low switching loss. However, SG‐MOSFETs suffer from crowded electric field at the edge of the split poly

Externí odkaz: https://doaj.org/article/906648a40cdb4ef1a1711234e9349e64

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Akademický článek

Demonstration of epitaxial growth of strain-relaxed GaN films on graphene/SiC substrates for long wavelength light-emitting diodes

Autor: Ye Yu, Tao Wang, Xiufang Chen, Lidong Zhang, Yang Wang, Yunfei Niu, Jiaqi Yu, Haotian Ma, Xiaomeng Li, Fang Liu, Gaoqiang Deng, Zhifeng Shi, Baolin Zhang, Xinqiang Wang, Yuantao Zhang

Publikováno v: Light: Science & Applications, Vol 10, Iss 1, Pp 1-8 (2021)

Abstract Strain modulation is crucial for heteroepitaxy such as GaN on foreign substrates. Here, the epitaxy of strain-relaxed GaN films on graphene/SiC substrates by metal-organic chemical vapor deposition is demonstrated. Graphene was directly prep

Externí odkaz: https://doaj.org/article/f5457596d21c434ea2e90239e9c6657f

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Akademický článek

High-resistivity nitrogen-polar GaN for GaN/AlGaN high electron mobility transistors by metalorganic chemical vapor deposition

Autor: Yang Wang, Gaoqiang Deng, Jie Ji, Haotian Ma, Shixu Yang, Jiaqi Yu, Yunfei Niu, Yusen Wang, Chao Lu, Yang Liu, Ke Tang, Wei Guo, Baolin Zhang, Yuantao Zhang

Publikováno v: AIP Advances, Vol 11, Iss 11, Pp 115301-115301-6 (2021)

Nitrogen-polar (N-polar) III-nitride has natural advantages in the fabrication of electronic devices. In this work, unintentionally doped N-polar GaN films were grown on sapphire substrates by metalorganic chemical vapor deposition. By optimizing the

Externí odkaz: https://doaj.org/article/83af3b2d8a5f49d997ebbb863961d0df

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Akademický článek

Effects of Oxygen Flow Rates on the Physical Characteristics of Magnetron Sputtered Single-Phase Polycrystalline Cu2O Films

Autor: Feifan Yang, Yibang Fan, Jingjie Li, Hongyuan Fu, Guojiao Xiang, Wenbo Peng, Yijian Zhou, Yang Zhao, Zhiqiang Zhen, Gaoqiang Deng, Hui Wang

Publikováno v: Materials Research, Vol 23, Iss 6 (2020)

The single-phase polycrystalline copper oxide (Cu2O) films were prepared on sapphire substrates by radio frequency (RF) magnetron sputtering technology which was characterized by low cost and high efficiency. The influences of oxygen flow rate on phy

Externí odkaz: https://doaj.org/article/4894f5daedcd4acbaaf2a766f27be813

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Akademický článek

n-ZnO/p-GaN heterojunction light-emitting diodes featuring a buried polarization-induced tunneling junction

Autor: Ling Li, Yuantao Zhang, Long Yan, Junyan Jiang, Xu Han, Gaoqiang Deng, Chen Chi, Junfeng Song

Publikováno v: AIP Advances, Vol 6, Iss 12, Pp 125204-125204-5 (2016)

n-ZnO/p-GaN heterojunction light-emitting diodes with a p-GaN/Al0.1Ga0.9N/n+-GaN polarization-induced tunneling junction (PITJ) were fabricated by metal-organic chemical vapor deposition. An intense and sharp ultraviolet emission centered at ∼396 n

Externí odkaz: https://doaj.org/article/c55bc1b175244477a52fe8f5655c263a

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