Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Gaolu Zhang"'
Publikováno v:
Photonics, Vol 9, Iss 4, p 252 (2022)
In this paper, we design and experimentally demonstrate an eight-channel cascaded Mach–Zehnder interferometer (MZI) based Local Area Network (LAN) Wavelength Division Multiplexing (WDM) (de)multiplexerwith channel spacing of 800 GHz on a silicon-on
Externí odkaz:
https://doaj.org/article/8bcc75b3210341d1a6c69b0c2ad53027
Publikováno v:
IEEE Photonics Technology Letters. 34:1242-1245
Autor:
Jiaqi Niu, Shanglin Yang, Ting Zhou, Hao Jia, Xin Fu, Zhizun Zhao, Zhen Li, Gaolu Zhang, Changhua Chen, Lin Yang
Publikováno v:
Nanophotonics. 11:4869-4878
Silicon-based optical switch is one of the key components for on-chip optical interconnect systems, and mode division multiplexing technology has been employed to boost optical switches’ channel capacity. However, the majority of the proven multimo
Publikováno v:
Journal of Lightwave Technology. 40:2052-2059
Publikováno v:
Optics express. 29(18)
The inverse-designed photonic device, with the characteristics of high performance and ultra-high compactness, is suitable for on-chip photonics applications. The gradient-based algorithms have high convergence efficiency. However, they depend on the
Publikováno v:
Asia Communications and Photonics Conference/International Conference on Information Photonics and Optical Communications 2020 (ACP/IPOC).
A 2×2 polarization splitter-rotator utilizing adiabatic asymmetric directional couplers are proposed on the lithium-niobate-on-insulator. The device exhibits broadband performance and is suitable for both TE and TM polarization diversity systems. ©
Publikováno v:
Optics Communications. 479:126365
Due to the strong birefringence, symmetrical directional couplers (DCs) are typically polarization-sensitive in the high index contrast platforms. In this letter, we demonstrate polarization-independent directional couplers utilizing orientation-engi
Publikováno v:
8th IEEE International Conference on Group IV Photonics.
High-quality GeSn alloys were grown on Ge-buffered Si substrates and a Ge 0.97 Sn 0.03 alloy was successfully used to fabricate photodetectors. The GeSn photodiodes have relatively high responsivities in all telecommunication bands.
Publikováno v:
7th IEEE International Conference on Group IV Photonics.
Epitaxial Ge 1−x Sn x alloys were grown on Si(100) by MBE at low temperature with a Ge buffer layer. The Ge buffer was grown in the same system by two step method using GeH 4 as gas source.