Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Gaokai Wang"'
Autor:
Gaokai Wang, Jingren Chen, Junhua Meng, Zhigang Yin, Ji Jiang, Yan Tian, Jingzhen Li, Jinliang Wu, Peng Jin, Xingwang Zhang
Publikováno v:
Fundamental Research, Vol 1, Iss 6, Pp 677-683 (2021)
Recently, hexagonal boron nitride (h-BN), an ultra-wide bandgap semiconductor, has attracted considerable attention owing to its excellent properties. In thin films grown on metal catalysts, contamination and damage induced by a transfer process cann
Externí odkaz:
https://doaj.org/article/4ebd785e6de740a1b5d331ed0c4573f9
Autor:
Jidong Huang, Yan Tian, Yong Cheng, Xingxing Li, Siyu Zhang, Ji Jiang, Jingren Chen, Gaokai Wang, Jingzhen Li, Zhigang Yin, Xingwang Zhang
Publikováno v:
Science China Materials. 66:1870-1878
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14ee832d382c11fe199535c0956331a2
https://doi.org/10.1007/s40843-022-2297-1
https://doi.org/10.1007/s40843-022-2297-1
Autor:
Jingren Chen, Ran Tao, Gaokai Wang, Zhigang Yin, Libin Zeng, Xinxin Yu, Siyu Zhang, Yun Wu, Zhonghui Li, Xingwang Zhang
Publikováno v:
Journal of Materials Chemistry C. 11:5324-5330
h-BNs with different orientations are directly grown on polycrystalline diamond due to minimization of the system energy. The diamond/h-BN heterojunction shows a type-II band alignment with a valence/conduction band offset of 2.08/1.86 eV.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f249019cae9395d1521943c57c654f7
https://doi.org/10.1039/d3tc00498h
https://doi.org/10.1039/d3tc00498h
Autor:
Gaokai Wang, Junhua Meng, Jingren Chen, Yong Cheng, Jidong Huang, Siyu Zhang, Zhigang Yin, Ji Jiang, Jinliang Wu, Xingwang Zhang
Publikováno v:
Crystal Growth & Design. 22:7207-7214
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46c3c9926818fef8134fb772a10acb5c
https://doi.org/10.1021/acs.cgd.2c00880
https://doi.org/10.1021/acs.cgd.2c00880
Autor:
Yan Tian, Yong Cheng, Jidong Huang, Siyu Zhang, Hao Dong, Gaokai Wang, Jingren Chen, Jinliang Wu, Zhigang Yin, Xingwang Zhang
Publikováno v:
Nano Research. 15:6628-6635
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ffc2f499fd69d42094705fe1331ac56a
https://doi.org/10.1007/s12274-022-4308-4
https://doi.org/10.1007/s12274-022-4308-4
Autor:
Gaokai Wang, Ji Jiang, Yan Tian, Maoyuan Zheng, Zhigang Yin, Xingxing Li, Xingwang Zhang, Jing Qi, Yong Cheng, Jingren Chen
Publikováno v:
Journal of Materials Chemistry C. 9:13954-13962
Group IVB (Zr and Hf) transition metal dichalcogenides (TMDs) have attracted considerable attention due to their predicted excellent electronic properties that are superior to group VIB TMDs. However, the synthesis of high-quality ZrSe2 layers is sel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f80b23c5978e55410affd88c023c9bce
https://doi.org/10.1039/d1tc03339e
https://doi.org/10.1039/d1tc03339e
Autor:
Ye Wang, Gaokai Wang, Zhigang Yin, Yanan Chen, Junhua Meng, Jinliang Wu, Peng Jin, Yan Tian, Jingbi You, Xingwang Zhang
Publikováno v:
ACS Applied Materials & Interfaces. 12:27361-27367
Recently, the deep ultraviolet (DUV) photodetectors fabricated from two-dimensional (2D) hexagonal boron nitride (h-BN) layers have emerged as a hot research topic. However, the existing studies show that the h-BN-based photodetectors have relatively
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a58428d855f1ad1ff7a8bccfaf17f1ef
https://doi.org/10.1021/acsami.0c05850
https://doi.org/10.1021/acsami.0c05850
Autor:
Jingren Chen, Gaokai Wang, Junhua Meng, Yong Cheng, Zhigang Yin, Yan Tian, Jidong Huang, Siyu Zhang, Jinliang Wu, Xingwang Zhang
Publikováno v:
ACS applied materialsinterfaces. 14(5)
Wide-band-gap layered semiconductor hexagonal boron nitride (h-BN) is attracting intense interest due to its unique optoelectronic properties and versatile applications in deep ultraviolet optoelectronic and two-dimensional electronic devices. Howeve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fd0a37e781b11c1d113f975503b01e7a
https://pubmed.ncbi.nlm.nih.gov/35080841
https://pubmed.ncbi.nlm.nih.gov/35080841
Autor:
Gaokai Wang, Jidong Huang, Siyu Zhang, Junhua Meng, Jingren Chen, Yiming Shi, Ji Jiang, Jingzhen Li, Yong Cheng, Libin Zeng, Zhigang Yin, Xingwang Zhang
Publikováno v:
Small. :2301086
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f8299a1e009ae3604d6685c2e4cf50d
https://doi.org/10.1002/smll.202301086
https://doi.org/10.1002/smll.202301086
Publikováno v:
Journal of synchrotron radiation. 5(Pt 3)
The four-crystal camera is one of the major items of equipment of the topography station at the Beijing Synchrotron Radiation Facility. The design and some applications of this camera are presented.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::56c015373dd89b877e6ed0d4f3b8bb40
https://pubmed.ncbi.nlm.nih.gov/15263696
https://pubmed.ncbi.nlm.nih.gov/15263696