Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Gaofeng Jiao"'
Autor:
Zhenbao Li, Guoqing Liu, Kai Yao, Gaofeng Jiao, Xiaoyan Xu, Qingbin Hao, Lihua Jin, Chengshan Li
Publikováno v:
Journal of Superconductivity and Novel Magnetism. 36:843-861
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ef3cf5570b0da3132468363dcd70642
https://doi.org/10.1007/s10948-023-06531-6
https://doi.org/10.1007/s10948-023-06531-6
Autor:
Zhenbao Li, Guoqing Liu, Gaofeng Jiao, Xiaoyan Xu, Qingbin Hao, Lifeng Bai, Kai Yao, Chengshan Li
Publikováno v:
Journal of Materials Science: Materials in Electronics. 33:21111-21126
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8ebe0942b2351879e72a9c1e08b6ed56
https://doi.org/10.1007/s10854-022-08914-2
https://doi.org/10.1007/s10854-022-08914-2
Autor:
Zhenbao Li, Guoqing Liu, Kai Yao, Gaofeng Jiao, Xiaoyan Xu, Qingbin Hao, Lihua Jin, Chengshan Li
Publikováno v:
Journal of Materials Science: Materials in Electronics. 34
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5dd73de701cb9cc9e95cf048bc6dd71d
https://doi.org/10.1007/s10854-023-10193-4
https://doi.org/10.1007/s10854-023-10193-4
Autor:
Qingyang, Wang, Pingxiang, Zhang, Guo, Yan, Sulpice, A., Xiaomei, Xiong, Fang, Yang, Guoqing, Liu, Gaofeng, Jiao, Chengshan, Li
Publikováno v:
In Rare Metal Materials and Engineering May 2013 42(5):881-884
Autor:
Qingyang, Wang, Guo, Yan, Sulpice, Andre., Mossang, Eric., Xiaomei, Xiong, Guoqing, Liu, Gaofeng, Jiao, Pingxiang, Zhang
Publikováno v:
In Rare Metal Materials and Engineering October 2012 41(10):1709-1712
Autor:
Qingbin Hao, Chengshan Li, Guoqing Liu, Xueqian Liu, Jianqing Feng, Shengnan Zhang, Gaofeng Jiao, Pingxiang Zhang
Publikováno v:
Journal of Materials Science: Materials in Electronics. 31:20742-20752
Bi2Sr2CaCu2O8+δ (Bi-2212)/Ag round wires were fabricated by imposing ultrasonic-vibration drawing (UVD) technique during both the single-filament and multi-filament cold-drawing processes. The frequency of ultrasonic-vibration was set fixed at 20 kH
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dbbfd3f7d2097c9380f440fd319c05a4
https://doi.org/10.1007/s10854-020-04587-x
https://doi.org/10.1007/s10854-020-04587-x
Autor:
Bo Yang, Qingbin Hao, Peng Xiao, Guoqing Liu, Gaofeng Jiao, Kai Yao, Xiaoyan Xu, Lijun Cui, S.N. Zhang, Chengshan Li, Jianqing Feng
Publikováno v:
SSRN Electronic Journal.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c97175d66b7f8896353b1b364b78f1a
https://doi.org/10.2139/ssrn.4303407
https://doi.org/10.2139/ssrn.4303407
Autor:
Xiaobo Ma, Qingbin Hao, Shengnan Zhang, Gaofeng Jiao, Guoqing Liu, Chengshan Li, Zheng Huiling, Zhang Pingxiang, Xiaoyan Xu
Publikováno v:
Materials Letters. 162:5-8
Multifilament Bi-2223/Ag tapes with different Pb contents in precursor powders were fabricated by powder in tube (PIT) method. The influence of Pb contents on the phase formation, microstructure and critical current density of Bi-2223/Ag tapes were s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f12c10d1bfc8f3cb63327b51dd3e56b2
https://doi.org/10.1016/j.matlet.2015.09.095
https://doi.org/10.1016/j.matlet.2015.09.095
Autor:
L.F. Bai, G.S. Li, Q.B. Hao, C.S. Li, L.J. Cui, H.L. Zheng, Xiaoyan Xu, Gaofeng Jiao, S.N. Zhang, Jianqing Feng, Zeming Yu, Liu Guoqing
Publikováno v:
Physica C: Superconductivity and its Applications. 571:1353605
In the past two years, the record of current carrying capacity of Bi2Sr2CaCu2Ox (Bi-2212) wire has been broken many times by using improved powder, which shows that the precursor powder plays an important role in the preparation of Bi-2212 wire. In o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e97f015b1bcf05cede0436e03789a064
https://doi.org/10.1016/j.physc.2020.1353605
https://doi.org/10.1016/j.physc.2020.1353605
Autor:
Hui Shao, G. Yan, Lian Zhou, Gaofeng Jiao, Xiaomei Xiong, Liu Guoqing, Di Shan, Qingyang Wang
Publikováno v:
Cryogenics. 52:482-485
Ti 3 SiC 2 is used as the dopant, which not only provides C source for C substitution for B in the MgB 2 lattice, but also produces more non-superconducting precipitates locating in MgB 2 grain boundaries acting as the pinning centers. Carbon substit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f64c0d479de894d3b487a283d3cbebf
https://doi.org/10.1016/j.cryogenics.2012.05.013
https://doi.org/10.1016/j.cryogenics.2012.05.013