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Publikováno v:
Microsystem Technologies. 27:2661-2670
A series of devices with the structure of ITO\poly(methoxy-5-(2′-ethylhexyloxy)-1,4-phyenylenevinylene) (MEH-PPV):fullerene (C60, 0 ~ 60 wt%)\Al were fabricated and measured. It is found that the device with 20 wt% C60 concentration exhibited an op
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::008d727aae13ee47a70d09d7c28c1a1e
https://doi.org/10.1007/s00542-020-05039-6
https://doi.org/10.1007/s00542-020-05039-6
Publikováno v:
The Journal of Physical Chemistry C. 123:17384-17389
It was experimentally observed that during illuminated capacitance–voltage (C–V) sweeping (from −15 to 15 V) of the device with structure ITO/100 nm bathophenanthroline (Bphen)/50 nm N,N′-[di(1-naphthyl)-N,N′-diphenyl]-1,1′-biphenyl-4,4
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::647249187df81bb36df8537784dca3e0
https://doi.org/10.1021/acs.jpcc.9b04389
https://doi.org/10.1021/acs.jpcc.9b04389
Autor:
Yuwei He, A. R. Yu, Shujuan Liu, Xiao-Yuan Hou, Y. J. Tang, Yongmao Hu, Huan Peng, Qi Zeng, Jiajun Qin, H. N. Xuxie, Xiaoqing Chen, Gao-Yu Zhong
Publikováno v:
Organic Electronics. 65:370-374
Intrinsic degradation in 100 nm AlQ3 OLED device with strong luminescence was observed while nearly no degradation in 50 nm AlQ3 device with weak luminescence was observed for the same operation time. Based on the EL and PL measurements, it was sugge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e25b6e692b6f6c6f587015f9c290ba6
https://doi.org/10.1016/j.orgel.2018.11.042
https://doi.org/10.1016/j.orgel.2018.11.042
Publikováno v:
Microsystem Technologies. 25:1467-1474
The loading–unloading curves of poly(methoxy-5-(2′-ethylhexyloxy)-1,4-phyen-ylenevinylene) (MEH-PPV) films were measured using four different tests of nanoindentation. Then the curves were simulated with the theory of Lennard-Jones (L-J) potentia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e338bf05209cb50f2efada56651bda7
https://doi.org/10.1007/s00542-018-4185-7
https://doi.org/10.1007/s00542-018-4185-7
Publikováno v:
Microsystem Technologies. 25:423-430
The mechanical and electrical characteristics of poly[1-methoxy-4-(3-propyloxy-heptaisobutyl-PSS)-2,5-phenylenevinylene] (PSS-PPV) film were studied in this work. The loading curves and Young’s modulus of PSS-PPV film were measured with nanoindenta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8be8fc0c63d999788d599f7b0e188331
https://doi.org/10.1007/s00542-018-3973-4
https://doi.org/10.1007/s00542-018-3973-4
Publikováno v:
Synthetic Metals. 226:113-118
The loading curves and Young’s modulus of poly(2-methoxy-5-(3′,7′-dimethyloctyloxy)-1,4-phenylenevinylene) (MDMO-PPV) films have been measured using nanoindentation through single- and multicycle- test. The ITO\MDMO-PPV\Al devices were fabricat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6dfc947fb3d583b6a7f3d06e8b53287b
https://doi.org/10.1016/j.synthmet.2017.02.013
https://doi.org/10.1016/j.synthmet.2017.02.013
Publikováno v:
Advances in Polymer Technology. 37:662-667
The piezoresistive devices with the structure of ITO/poly(3-hexylthiophene) (P3HT; spin coating 90 nm film)/Al (75 nm) have been fabricated and measured. We measured the I-V characteristics of the devices under different stresses. The stress ranges f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30bb514316bf5ec45e8ca3921f758033
https://doi.org/10.1002/adv.21707
https://doi.org/10.1002/adv.21707
Publikováno v:
Journal of Applied Physics. 126:204501
In order to study the electric-field-assisted generation of mobile holes, a capacitance-voltage method is applied to asymmetric capacitancelike devices. The concentration of mobile holes generated from charge-transfer complexes at the CuPc/MoO3 inter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e89e078dcfb450fca49bd9ca6a565ab5
https://doi.org/10.1063/1.5121862
https://doi.org/10.1063/1.5121862
Publikováno v:
AIP Advances, Vol 9, Iss 3, Pp 035149-035149-6 (2019)
An electron-only device was realized by using 20 nm Bphen layer to modify ITO anode in NPB/AlQ3 heterojunction organic light-emitting diode (OLED). Different from the usual application as an anode buffer layer, up to 10 nm thick MoO3 layer was insert
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6e431d8b002da59321ba71389f747846
https://doaj.org/article/a371810be9454ee0b4497a1c5169d0a5
https://doaj.org/article/a371810be9454ee0b4497a1c5169d0a5