Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Gao, Yan Dr."'
Publikováno v:
Gao, Yan Dr.; Ben-Yaacov, I; Mishra, U K; & Hu, E L. (2004). Optimization of AlGaN/GaN current aperture vertical electron transistor (CAVET) fabricated by photoelectrochemical wet etching. Journal of Applied Physics, 96(11), 6925-6927. UC Santa Barbara: Retrieved from: http://www.escholarship.org/uc/item/8527906w
AlGaN/GaN current aperture vertical electron transistor (CAVET) was fabricated and optimized for band gap selective photoelectrochemical wet etching. The large polarization induced voltage offset (around 2.5-4 eV) observed in the first generation CAV
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______325::b5097bc19e2575ceebc05e9dbfe92812
http://www.escholarship.org/uc/item/8527906w
http://www.escholarship.org/uc/item/8527906w
Publikováno v:
Gao, Yan Dr.; Craven, M D; Speck, J S; DenBaars, S P; & Hu, E L. (2004). Dislocation-and crystallographic-dependent photoelectrochemical wet etching of gallium nitride. Applied Physics Letters, 84(17), 3322-3324. UC Santa Barbara: Retrieved from: http://www.escholarship.org/uc/item/1jt212q2
Polarity and dislocation dependence study of photoelectrochemical wet etching on GaN was carried out on lateral epitaxial overgrown nonpolar (11 (2) over bar0)a-GaN/(1 (1) over bar 02)r-plane sapphire substrate. This LEO nonpolar GaN sample has low d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______325::3efa5ec60aaa7fec3376f32e0d923018
http://www.escholarship.org/uc/item/1jt212q2
http://www.escholarship.org/uc/item/1jt212q2