Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Gao, Yan Dr."'
Publikováno v:
Gao, Yan Dr.; Ben-Yaacov, I; Mishra, U K; & Hu, E L. (2004). Optimization of AlGaN/GaN current aperture vertical electron transistor (CAVET) fabricated by photoelectrochemical wet etching. Journal of Applied Physics, 96(11), 6925-6927. UC Santa Barbara: Retrieved from: http://www.escholarship.org/uc/item/8527906w
AlGaN/GaN current aperture vertical electron transistor (CAVET) was fabricated and optimized for band gap selective photoelectrochemical wet etching. The large polarization induced voltage offset (around 2.5-4 eV) observed in the first generation CAV
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______325::b5097bc19e2575ceebc05e9dbfe92812
http://www.escholarship.org/uc/item/8527906w
http://www.escholarship.org/uc/item/8527906w
Publikováno v:
Gao, Yan Dr.; Craven, M D; Speck, J S; DenBaars, S P; & Hu, E L. (2004). Dislocation-and crystallographic-dependent photoelectrochemical wet etching of gallium nitride. Applied Physics Letters, 84(17), 3322-3324. UC Santa Barbara: Retrieved from: http://www.escholarship.org/uc/item/1jt212q2
Polarity and dislocation dependence study of photoelectrochemical wet etching on GaN was carried out on lateral epitaxial overgrown nonpolar (11 (2) over bar0)a-GaN/(1 (1) over bar 02)r-plane sapphire substrate. This LEO nonpolar GaN sample has low d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______325::3efa5ec60aaa7fec3376f32e0d923018
http://www.escholarship.org/uc/item/1jt212q2
http://www.escholarship.org/uc/item/1jt212q2
Autor:
Ngai Fen Cheung, Rosemary Mander
The first book to present the history, ideas, life and works of Chinese midwives and birth attendants, this volume seeks to encapsulate and explain the changing ideas about the practice of midwifery in China. Using participant observations and interv