Contactless gating, surface charging and illumination effects in a buried Al0.24Ga0.76As/GaAs quantum well structure.

Autor: Biasini, M., Gann, R. D., Pfeiffer, L. N., West, K. W., Gao, X. P.A., Williams, B. C. D., Yarmoff, J. A., Mills Jr., A. P.

Publikováno v: European Physical Journal B: Condensed Matter; Sep2005, Vol. 47 Issue 2, p305-314, 10p, 1 Diagram, 1 Chart, 7 Graphs