Zobrazeno 1 - 10
of 1 420
pro vyhledávání: '"Gao, H. J."'
Autor:
Feng, X. Y., Zhao, Z., Luo, J., Yang, J., Fang, A. F., Yang, H. T., Gao, H. J., Zhou, R., Zheng, Guo-qing
Publikováno v:
npj Quantum Materials 8, 23 (2023)
Clarifying the interplay between charge density waves (CDWs) and superconductivity is important in the kagome metal CsV$_3$Sb$_5$, and pressure ($P$) can play a crucial role. Here, we present $^{121/123}$Sb nuclear quadrupole resonance (NQR) measurem
Externí odkaz:
http://arxiv.org/abs/2303.01225
Autor:
Luo, J., Zhao, Z., Zhou, Y. Z., Yang, J., Fang, A. F., Yang, H. T., Gao, H. J., Zhou, R., Zheng, Guo-qing
Publikováno v:
npj Quantum Materials 7, 30 (2022)
$A$V$_3$Sb$_5$ ($A$ = K, Rb, Cs) is a novel kagome superconductor coexisting with the charge density wave (CDW) order. Identifying the structure of the CDW order is crucial for understanding the exotic normal state and superconductivity in this syste
Externí odkaz:
http://arxiv.org/abs/2108.10263
Autor:
Lin, X, Lu, JC, Shao, Y, Zhang, YY, Wu, X, Pan, JB, Gao, L, Zhu, SY, Qian, K, Zhang, YF, Bao, DL, Li, LF, Wang, YQ, Liu, ZL, Sun, JT, Lei, T, Liu, C, Wang, JO, Ibrahim, K, Leonard, DN, Zhou, W, Guo, HM, Wang, YL, Du, SX, Pantelides, ST, Gao, H-J
Publikováno v:
Nature Materials, 16, 717-721 (2017)
Two-dimensional (2D) materials have been studied extensively as monolayers 1-5, vertical or lateral heterostructures 6-8. To achieve functionalization, monolayers are often patterned using soft lithography and selectively decorated with molecules 9,1
Externí odkaz:
http://arxiv.org/abs/2004.02433
Autor:
Ma, J. -Z., He, J. -B., Xu, Y. -F., Lv, B. -Q., Chen, D., Zhu, W. -L., Zhang, S., Kong, L. -Y., Gao, X., Rong, L. -Y., Huang, Y. -B., Richard, P., Xi, C. -Y., Shao, Y., Wang, Y. -L., Gao, H. -J., Dai, X., Fang, C., Weng, H. -M., Chen, G. -F., Qian, T., Ding, H.
Publikováno v:
Nature Physics 14, 349-354 (2018)
Topological Dirac and Weyl semimetals not only host quasiparticles analogous to the elementary fermionic particles in high-energy physics, but also have nontrivial band topology manifested by exotic Fermi arcs on the surface. Recent advances suggest
Externí odkaz:
http://arxiv.org/abs/1706.02664
Autor:
Que, Yande, Zhang, Yong, Wang, Yeliang, Huang, Li, Xu, Wenyan, Tao, Jing, Wu, Lijun, Zhu, Yimei, Kim, Kisslinger, Weinl, Michael, Schreck, Matthias, Shen, Chengmin, Du, Shixuan, Liu, Yunqi, Gao, H. -J.
Publikováno v:
Advanced Materials Interfaces 2015, 1400543
Single-crystalline transition metal films are ideal playing fields for the epitaxial growth of graphene and graphene-base materials. Graphene-silicon layered structures were successfully constructed on Ir(111) thin film on Si substrate with an yttria
Externí odkaz:
http://arxiv.org/abs/1503.00392
Publikováno v:
Appl. Phys. Lett. 104, 093110 (2014)
Large-area bilayer graphene (BG) is grown epitaxially on Ru(0001) surface and characterized by low temperature scanning tunneling microscopy. The lattice of the bottom layer of BG is stretched by 1.2%, while strain is absent from the top layer. The l
Externí odkaz:
http://arxiv.org/abs/1406.1094
Autor:
Woods, C. R., Britnell, L., Eckmann, A., Ma, R. S., Lu, J. C., Guo, H. M., Lin, X., Yu, G. L., Cao, Y., Gorbachev, R. V., Kretinin, A. V., Park, J., Ponomarenko, L. A., Katsnelson, M. I., Gornostyrev, Yu. N., Watanabe, K., Taniguchi, T., Casiraghi, C., Gao, H. J., Geim, A. K., Novoselov, K. S.
Publikováno v:
Nature Physics 10(6), 451 - 456 (2014)
When a crystal is subjected to a periodic potential, under certain circumstances (such as when the period of the potential is close to the crystal periodicity; the potential is strong enough, etc.) it might adjust itself to follow the periodicity of
Externí odkaz:
http://arxiv.org/abs/1401.2637
The adsorption of functional molecules on insulator surfaces is of great importance to molecular electronics. We present a systematical investigation of geometric and electronic properties of PTCDA and C60 on KBr(001) using DFT and non-contact atomic
Externí odkaz:
http://arxiv.org/abs/1303.6069
Autor:
Zhang, H. G., Hu, H., Pan, Y., Mao, J. H., Gao, M., Guo, H. M., Du, S. X., Greber, T., Gao, H. -J.
Publikováno v:
J. Phys.: Condens. Matter 22 (2010) 302001
Laterally localized electronic states are identified on a single layer of graphene on ruthenium. The individual states are separated by 3 nm and comprise regions of about 90 carbon atoms. This constitutes a quantum dot array, evidenced by quantum wel
Externí odkaz:
http://arxiv.org/abs/0911.4024
We demonstrate a method for synthesizing large scale single layer graphene by thermal annealing of ruthenium single crystal containing carbon. Low energy electron diffraction indicates the graphene grows to as large as millimeter dimensions with good
Externí odkaz:
http://arxiv.org/abs/0709.2858