Zobrazeno 1 - 10
of 389
pro vyhledávání: '"Gao, C. L."'
Autor:
Han, C. Q., Li, H., Chen, W. J., Zhu, Fengfeng, Yao, Meng-Yu, Li, Z. J., Wang, M., Gao, Bo F., Guan, D. D., Liu, Canhua, Gao, C. L., Qian, Dong, Jia, Jin-Feng
Publikováno v:
App. Phys. Lett. 107, 171602 (2015)
Using high-resolution angle-resolved photoemission spectroscopy and scanning tunneling microscopy/spectroscopy, the atomic and low energy electronic structure of the Sr-doped superconducting topological insulators (SrxBi2Se3) was studied. Scanning tu
Externí odkaz:
http://arxiv.org/abs/1510.08177
Autor:
Yao, Meng-Yu, Zhu, Fengfeng, Miao, Lin, Han, C. Q., Yang, Fang, Guan, D. D., Gao, C. L., Liu, Canhua, Qian, Dong, Jia, Jin-feng
Publikováno v:
Scientific Reports 6, 21326 (2016)
Using high-resolution angle-resolved photoemission spectroscopy, the electronic structure near the Fermi level and the topological property of the Bi(111) films grown on the Bi$_2$Te$_3$(111) substrate were studied. Very different from the bulk Bi, w
Externí odkaz:
http://arxiv.org/abs/1506.04464
Autor:
Liu, H. J., Jiao, L., Xie, L., Yang, F., Chen, J. L., Ho, W. K., Gao, C. L., Jia, J. F., Cui, X. D., Xie, M. H.
Publikováno v:
2D Mater. 2 034004 (2015)
Interests in two-dimensional transition-metal dichalcogenides have prompted some recent efforts to grow ultrathin layers of these materials epitaxially using molecular-beam epitaxy. However, growths of monolayer and bilayer WSe2, an important member
Externí odkaz:
http://arxiv.org/abs/1506.04460
Autor:
Han, C. Q., Yao, M. Y., Bai, X. X., Miao, Lin, Zhu, Fengfeng, Guan, D. D., Wang, Shun, Gao, C. L., Liu, Canhua, Qian, Dong, Liu, Y., Jia, Jin-feng
Publikováno v:
Phys. Rev. B 90, 085101 (2014)
Electronic structures of single crystalline black phosphorus were studied by state-of-art angleresolved photoemission spectroscopy. Through high resolution photon energy dependence measurements, the band dispersions along out-of-plane and in-plane di
Externí odkaz:
http://arxiv.org/abs/1405.7431
Autor:
Miao, Lin, Wang, Z. F., Yao, Meng-Yu, Zhu, Fengfeng, Dil, J. H., Gao, C. L., Liu, Canhua, Liu, Feng, Qian, Dong, Jia, Jin-Feng
Publikováno v:
Physical Review B 89, 155116 (2014)
Combining first-principles calculations and spin- and angle-resolved photoemission spectroscopy measurements, we identify the helical spin textures for three different Dirac cone states in the interfaced systems of a 2D topological insulator (TI) of
Externí odkaz:
http://arxiv.org/abs/1404.6306
Autor:
Yu, D. J., Yang, F., Miao, Lin, Han, C. Q., Yao, Meng-Yu, Zhu, Fengfeng, Song, Y. R., Zhang, K. F., Ge, J. F., Yao, X., Zou, Z. Q., Li, Z. J., Gao, B., Guan, D. D., Liu, Canhua, Gao, C. L., Qian, Dong, Jia, Jin-feng
Publikováno v:
Physical Review B 89, 100501(R) (2014)
Due to the large spin-orbital coupling in the layered 5d-transition metal chalcogenides compound, the occurrence of superconductivity in Ir2-xPdxTe2 offers a good chance to search for possible topological superconducting states in this system. We did
Externí odkaz:
http://arxiv.org/abs/1402.4858
Autor:
Miao, Lin, Wang, Z. F., Ming, Wenmei, Yao, Meng-Yu, Wang, Meixiao, Yang, Fang, Song, Y. R., Zhu, Fengfeng, Fedorov, Alexei V., Sun, Z., Gao, C. L., Liu, Canhua, Xue, Qi-Kun, Liu, Chao-Xing, Liu, Feng, Qian, Dong, Jia, Jin-Feng
Publikováno v:
PNAS, 110, 2758 (2013)
Topological insulators (TIs) and graphene present two unique classes of materials which are characterized by spin polarized (helical) and non-polarized Dirac-cone band structures, respectively. The importance of many-body interactions that renormaliz
Externí odkaz:
http://arxiv.org/abs/1302.5998
Autor:
Li, H., Song, Y. R., Yao, Meng-Yu, Zhu, Fengfeng, Liu, Canhua, Gao, C. L., Jia, Jin-Feng, Qian, Dong, Yao, X., Shi, Y. J., Wu, D.
Publikováno v:
J. Appl. Phys. 113, 043926 (2013)
The electronic and magnetic properties of iron-doped topological insulator Bi1.84-xFe0.16CaxSe3 single crystals were studied. By co-doping Fe and Ca atoms, ferromagnetic bulk states with different carrier density (from n-type to p-type) were obtained
Externí odkaz:
http://arxiv.org/abs/1302.0371
Autor:
Wang, Z. F., Yao, Meng-Yu, Ming, Wenmei, Miao, Lin, Zhu, Fengfeng, Liu, Canhua, Gao, C. L., Qian, Dong, Jia, Jin-Feng, Liu, Feng
Publikováno v:
Nature Communications 4:1384 (2013)
Topological insulators (TIs) are a unique class of materials characterized by a surface (edge) Dirac cone state of helical Dirac fermions in the middle of bulk (surface) gap. When the thickness (width) of TIs is reduced, however, interaction between
Externí odkaz:
http://arxiv.org/abs/1301.5377
Autor:
Wang, Mei-Xiao, Liu, Canhua, Xu, Jin-Peng, Yang, Fang, Miao, Lin, Yao, Meng-Yu, Gao, C. L., Shen, Chenyi, Ma, Xucun, Chen, X., Xu, Zhu-An, Liu, Ying, Zhang, Shou-Cheng, Qian, Dong, Jia, Jin-Feng, Xue, Qi-Kun
Publikováno v:
Science, 336, 52 (2012)
This paper has been withdrawn by the author due to journal requirement.
Comment: This paper has been withdrawn by the author due to journal requirement
Comment: This paper has been withdrawn by the author due to journal requirement
Externí odkaz:
http://arxiv.org/abs/1112.1772