Zobrazeno 1 - 10
of 73
pro vyhledávání: '"Gao, Baoxin"'
Corrosion behavior of surface-modified Ni-based alloys in molten NaCl–KCl for thermal energy storage
Publikováno v:
In Materials Chemistry and Physics 15 February 2025 332
Publikováno v:
Microwave and Optical Technology Letters. 39:295-298
A large-signal equivalent-circuit model of quantum-well lasers is developed in this paper. This model is based on three-level rate equations, including carrier transport effects and the role of the gateway state at the quantum well. The experiential
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f635d04c1a0cad96301e15dfa543e908
https://doi.org/10.1002/mop.11195
https://doi.org/10.1002/mop.11195
Publikováno v:
Microwave and Optical Technology Letters. 35:357-360
This paper presents research on device parameters for a 2.5–10-Gb/s high electron mobility transistor (HEMT) modulator driver IC. The effect of DC and capacitance parameters on the driver IC is discussed, and their ability to meet the requirements
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0bc9165572ae475d282ee52788335bf1
https://doi.org/10.1002/mop.10606
https://doi.org/10.1002/mop.10606
Autor:
Shan Fuqi, Gao Baoxin
Publikováno v:
Microwave and Optical Technology Letters. 43:144-146
A novel, compact, rectangular increasing-distance spiral-slot (RIDSS) structure is proposed for photonic band-gap (PBG) applications. The dimension of the RIDSS structure is only about 1/8λ at the cutoff frequency. Only three cells of the RIDSS-PBG
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f821f01d7386b947e1993cc03d41ff7f
https://doi.org/10.1002/mop.20402
https://doi.org/10.1002/mop.20402
Autor:
Shan Fuqi, Gao Baoxin
Publikováno v:
Microwave and Optical Technology Letters. 43:537-539
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf0a74c066aef576013088b35b7df299
https://doi.org/10.1002/mop.20527
https://doi.org/10.1002/mop.20527
Publikováno v:
Microwave and Optical Technology Letters. 38:102-104
A microwave equivalent circuit model for a PIN photodetector based on rate equations is presented using a SPICE simulator. The model is employed for 2.5-Gb/s optical receiver design. The simulated frequency response performance of the receiver is in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::097cd0e7edb8a536c8b2e3da33edd8e2
https://doi.org/10.1002/mop.10984
https://doi.org/10.1002/mop.10984
Publikováno v:
Microwave and Optical Technology Letters. 34:191-193
A simple way to extract the parasitic elements of the laser diode model is proposed. The parasitic elements are determined by directly using measured S11 parameters versus frequency at zero bias point and above threshold current bias point. Thus the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d484e57e0f9d4ddb4780dedca51a3d7
https://doi.org/10.1002/mop.10414
https://doi.org/10.1002/mop.10414
Publikováno v:
Microwave and Optical Technology Letters. 28:26-28
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5022e661e2674f15fdcdb37e2383e6f4
https://doi.org/10.1002/1098-2760(20010105)28:1<26::aid-mop7>3.0.co
https://doi.org/10.1002/1098-2760(20010105)28:1<26::aid-mop7>3.0.co
Publikováno v:
ICMMT 4th International Conference on, Proceedings Microwave and Millimeter Wave Technology, 2004..
The Vicsek fractal patch antenna is introduced to reduce the antenna size in this paper. Compared to the normal square patch antenna, this antenna reveals lower resonant frequency. Some results of experiments and simulations using the method of momen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62529bcd5d625e6af790c1496025d8f9
https://doi.org/10.1109/icmmt.2004.1411469
https://doi.org/10.1109/icmmt.2004.1411469
Publikováno v:
2002 3rd International Conference on Microwave and Millimeter Wave Technology, 2002. Proceedings. ICMMT 2002..
The experimental characterization of the transient response within ohmic contact series RF MEMS switches is demonstrated in this paper. Standard devices are inserted into a time domain test setup, and the transient response is measured using an oscil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf788307021bdf8b7355463758bb68c8
https://doi.org/10.1109/icmmt.2002.1187688
https://doi.org/10.1109/icmmt.2002.1187688