In situ etching of \b{eta}-Ga2O3 using tert-butyl chloride in an MOCVD system

Autor: Gorsak, Cameron A., Bowman, Henry J., Gann, Katie R., Buontempo, Joshua T., Smith, Kathleen T., Tripathi, Pushpanshu, Steele, Jacob, Jena, Debdeep, Schlom, Darrell G., Xing, Huili Grace, Thompson, Michael O., Nair, Hari P.

In this study, we investigate in situ etching of \b{eta}-Ga2O3 in a metal-organic chemical vapor deposition (MOCVD) system using tert-Butyl chloride (TBCl). We report the successful etching of both heteroepitaxial (-201)-oriented and homoepitaxial (0

Externí odkaz: http://arxiv.org/abs/2408.01574

Silicon implantation and annealing in β-Ga2O3: Role of ambient, temperature, and time.

Autor: Gann, Katie R., Pieczulewski, Naomi, Gorsak, Cameron A., Heinselman, Karen, Asel, Thaddeus J., Noesges, Brenton A., Smith, Kathleen T., Dryden, Daniel M., Xing, Huili Grace, Nair, Hari P., Muller, David A., Thompson, Michael O.

Publikováno v: Journal of Applied Physics; 1/7/2024, Vol. 135 Issue 1, p1-10, 10p

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Initial nucleation of metastable γ-Ga2O3 during sub-millisecond thermal anneals of amorphous Ga2O3.

Autor: Gann, Katie R., Chang, Celesta S., Chang, Ming-Chiang, Sutherland, Duncan R., Connolly, Aine B., Muller, David A., van Dover, Robert B., Thompson, Michael O.

Publikováno v: Applied Physics Letters; 8/8/2022, Vol. 121 Issue 6, p1-8, 8p

Optical Identification of Materials Transformations in Oxide Thin Films.

Autor: Sutherland DR; Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, United States., Connolly AB; Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, United States., Amsler M; Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, United States.; Department of Chemistry and Biochemistry, University of Bern, Freiestrasse 3, CH-3012 Bern, Switzerland., Chang MC; Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, United States., Gann KR; Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, United States., Gupta V; Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, United States., Ament S; Department of Computer Science, Cornell University, Ithaca, New York 14853, United States., Guevarra D; Joint Center for Artificial Photosynthesis, California Institute of Technology, Pasadena, California 91125, United States., Gregoire JM; Joint Center for Artificial Photosynthesis, California Institute of Technology, Pasadena, California 91125, United States., Gomes CP; Department of Computer Science, Cornell University, Ithaca, New York 14853, United States., Bruce van Dover R; Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, United States., Thompson MO; Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, United States.

Publikováno v: ACS combinatorial science [ACS Comb Sci] 2020 Dec 14; Vol. 22 (12), pp. 887-894. Date of Electronic Publication: 2020 Oct 29.