Cathodoluminescence intensity and dislocation contrast evolutions under electron beam excitation in epitaxial GaN laterally overgrown on (0 0 0 1) sapphire

Autor: Dassonneville, S, Amokrane, A, Sieber, B ^*, Farvacque, J.-L, Beaumont, B, Bousquet, V, Gibart, P, Leifer, K, Ganiere, J.-D

Publikováno v: In Physica B: Physics of Condensed Matter 15 December 1999 273-274:148-151

Intrasubband and intersubband scattering in semiconductor quantum wires

Autor: Ambigapathy, R, Oberli, D.Y, Ganière, J.-D, Kapon, E, Deveaud, B ^*

Publikováno v: In Physica B: Physics of Condensed Matter 1999 272(1):107-109

Fluorescence quantum yield and lifetime of `red' polydiacetylene chains isolated in their crystalline monomer matrix

Autor: Lécuiller, R. ^a, Berréhar, J. ^a, Lapersonne-Meyer, C. ^a, Schott, M. ^{a, *}, Ganière, J.-D. ^b

Publikováno v: In Chemical Physics Letters 1999 314(3):255-260

Exciton localization on basal stacking faults in a-plane GaN probed by picosecond time-resolved cathodoluminescence

Autor: Corfdir, P., Lefebvre, P., Ristic, J., Dussaigne, A., Sonderegger, S., Martin, D., Ganiere, J.-D., Grandjean, N., Deveaud-Pledran, B.

Publikováno v: Int. Conf. On Optics of Excitons in Confined Systems-OECS11.
Int. Conf. On Optics of Excitons in Confined Systems-OECS11., Sep 2009, Madrid, Spain

International audience; We examine the capture dynamics of excitons by basal stacking faults in a-plane GaN by using time-resolved CL.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::40393e900785bdac7f629af7522d1f11
https://hal.archives-ouvertes.fr/hal-00797193

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