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pro vyhledávání: '"Ganguly U"'
Autor:
Pramanik S, Mondal LK, Paine SK, Jain S, Chowdhury S, Ganguly U, Ghosh S, Bose C, Bhattacharjee K, Bhaduri G
Publikováno v:
Clinical Ophthalmology, Vol Volume 15, Pp 3341-3350 (2021)
Subhasish Pramanik,1 Lakshmi Kanta Mondal,2 Suman Kalyan Paine,3 Sneha Jain,2 Subhankar Chowdhury,1 Upasana Ganguly,4 Sayantan Ghosh,2 Chiranjit Bose,1 Koena Bhattacharjee,2 Gautam Bhaduri5 1Institute of Post Graduate Medical Education and Research (
Externí odkaz:
https://doaj.org/article/2fd35cb97e8740b79153db352c5d50d4
Learning of deep neural networks (DNN) using Resistive Processing Unit (RPU) architecture is energy-efficient as it utilizes dedicated neuromorphic hardware and stochastic computation of weight updates for in-memory computing. Charge Trap Flash (CTF)
Externí odkaz:
http://arxiv.org/abs/2402.09792
Publikováno v:
Indian Journal of Dermatology, Vol 41, Iss 3, Pp 89-92 (1996)
ABSTRACT: One hundred cases of common pyodermas consisting of four groups, namely impetigo, furunculosis and chronic folliculitis were taken. Each group containing twenty five cases were divided again into three subgroups. From each group, 15 were tr
Externí odkaz:
https://doaj.org/article/69cd8d4130b84529a9ddf2eb09852395
PrMnO$_3$ (PMO) based RRAM shows selector-less behavior due to high-non-linearity. Recently, the non-linearity, along with volatile hysteresis, is demonstrated and utilized as a compact oscillator to enable highly scaled oscillatory neurons, which en
Externí odkaz:
http://arxiv.org/abs/2006.04636
PrMnO3 (PMO) based Resistance Random Access Memory (RRAM) has recently been considered for selector-less RRAM and neuromorphic computing applications by utilizing its current shoot-up. This current shoot-up in the PMO device is attributed to the ther
Externí odkaz:
http://arxiv.org/abs/2002.00703
Earlier, the DC hole-current modeling of PCMO RRAM by drift-diffusion (DD) including self-heating (SH) in TCAD (but without ionic transport) was able to explain the experimentally observed SCLC characteristics, prior to resistive switching. Further,
Externí odkaz:
http://arxiv.org/abs/1612.05293
Autor:
Malviya, P., Sadana, S., Lele, A., Priyadarshi, K., Sharma, A., Naik, A., Bandhu, L., Bende, A., Tsundus, S., Kumar, S., Singh, V.P., Chawla, A., Chawla, P., Singh, A., Sehgal, D., Kumar, A., Uddin, W., Chatterjee, S., Suri, M., Jatana, H.S., Ganguly, U.
Publikováno v:
In Solid State Electronics February 2022 188
Space Charge Limited Current (SCLC) based conduction has been identified for PCMO-based RRAM devices based on the observation that $I \propto V^{\alpha}$ where $\alpha \approx 2$. A critical feature of the IV characteristics is a sharp rise in curren
Externí odkaz:
http://arxiv.org/abs/1605.08755
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