Zobrazeno 1 - 10
of 106
pro vyhledávání: '"Ganguly, Samiran"'
Autor:
Morshed, Md Golam, Vakili, Hamed, Sakib, Mohammad Nazmus, Ganguly, Samiran, Stan, Mircea R., Ghosh, Avik W.
We present a novel design of a strained topological insulator spin-orbit torque random access memory (STI-SOTRAM) bit cell comprising a piezoelectric/magnet (gating)/topological insulator (TI)/magnet (storage) heterostructure that leverages the TI's
Externí odkaz:
http://arxiv.org/abs/2407.20925
Autor:
Selcuk, Kemal, Bunaiyan, Saleh, Singh, Nihal Sanjay, Sayed, Shehrin, Ganguly, Samiran, Finocchio, Giovanni, Datta, Supriyo, Camsari, Kerem Y.
Publikováno v:
NPJ Spintronics (2024)
An emerging paradigm in modern electronics is that of CMOS + $\sf X$ requiring the integration of standard CMOS technology with novel materials and technologies denoted by $\sf X$. In this context, a crucial challenge is to develop accurate circuit m
Externí odkaz:
http://arxiv.org/abs/2404.19345
Stochastic neurons are efficient hardware accelerators for solving a large variety of combinatorial optimization problems. "Binary" stochastic neurons (BSN) are those whose states fluctuate randomly between two levels +1 and -1, with the probability
Externí odkaz:
http://arxiv.org/abs/2402.06168
Autor:
Morshed, Md Golam, Rehm, Laura, Shukla, Ankit, Xie, Yunkun, Ganguly, Samiran, Rakheja, Shaloo, Kent, Andrew D., Ghosh, Avik W.
True random number generators (TRNGs) are fundamental building blocks for many applications, such as cryptography, Monte Carlo simulations, neuromorphic computing, and probabilistic computing. While perpendicular magnetic tunnel junctions (pMTJs) bas
Externí odkaz:
http://arxiv.org/abs/2310.18781
Low energy barrier magnet (LBM) technology has recently been proposed as a candidate for accelerating algorithms based on energy minimization and probabilistic graphs because their physical characteristics have a one-to-one mapping onto the primitive
Externí odkaz:
http://arxiv.org/abs/2302.08074
Publikováno v:
Front. Nanotechnol. 5:1146852 (2023)
Neuromorphic computing, commonly understood as a computing approach built upon neurons, synapses, and their dynamics, as opposed to Boolean gates, is gaining large mindshare due to its direct application in solving current and future computing techno
Externí odkaz:
http://arxiv.org/abs/2302.05056
Autor:
Finocchio, Giovanni, Incorvia, Jean Anne C., Friedman, Joseph S., Yang, Qu, Giordano, Anna, Grollier, Julie, Yang, Hyunsoo, Ciubotaru, Florin, Chumak, Andrii, Naeemi, Azad J., Cotofana, Sorin D., Tomasello, Riccardo, Panagopoulos, Christos, Carpentieri, Mario, Lin, Peng, Pan, Gang, Yang, J. Joshua, Todri-Sanial, Aida, Boschetto, Gabriele, Makasheva, Kremena, Sangwan, Vinod K., Trivedi, Amit Ranjan, Hersam, Mark C., Camsari, Kerem Y., McMahon, Peter L., Datta, Supriyo, Koiller, Belita, Aguilar, Gabriel H., Temporão, Guilherme P., Rodrigues, Davi R., Sunada, Satoshi, Everschor-Sitte, Karin, Tatsumura, Kosuke, Goto, Hayato, Puliafito, Vito, Åkerman, Johan, Takesue, Hiroki, Di Ventra, Massimiliano, Pershin, Yuriy V., Mukhopadhyay, Saibal, Roy, Kaushik, Wang, I-Ting, Kang, Wang, Zhu, Yao, Kaushik, Brajesh Kumar, Hasler, Jennifer, Ganguly, Samiran, Ghosh, Avik W., Levy, William, Roychowdhury, Vwani, Bandyopadhyay, Supriyo
Publikováno v:
Nano Futures (2024)
In the "Beyond Moore's Law" era, with increasing edge intelligence, domain-specific computing embracing unconventional approaches will become increasingly prevalent. At the same time, adopting a variety of nanotechnologies will offer benefits in ener
Externí odkaz:
http://arxiv.org/abs/2301.06727
The surface state of a 3D topological insulator (3DTI) is a spin-momentum locked conductive state, whose large spin hall angle can be used for the energy-efficient spin orbit torque based switching of an overlying ferromagnet (FM). Conversely, the ga
Externí odkaz:
http://arxiv.org/abs/2203.14389
A P-N junction engineered within a Dirac cone system acts as a gate tunable angular filter based on Klein tunneling. For a 3D topological insulator with substantial bandgap, such a filter can produce a charge-to-spin conversion due to the dual effect
Externí odkaz:
http://arxiv.org/abs/2110.02641
Autor:
Ahmed, Sheikh Z., Ganguly, Samiran, Yuan, Yuan, Zheng, Jiyuan, Tan, Yaohua, Campbell, Joe C., Ghosh, Avik W.
III-V material based digital alloy Avalanche Photodiodes (APDs) have recently been found to exhibit low noise similar to Silicon APDs. The III-V materials can be chosen to operate at any wavelength in the infrared spectrum. In this work, we present a
Externí odkaz:
http://arxiv.org/abs/2102.04647