Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Gangtae Jin"'
Autor:
Gangtae Jin, Christian D. Multunas, James L. Hart, Mehrdad T. Kiani, Nghiep Khoan Duong, Quynh P. Sam, Han Wang, Yeryun Cheon, David J. Hynek, Hyeuk Jin Han, Ravishankar Sundararaman, Judy J. Cha
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-8 (2024)
Abstract Topological materials confined in 1D can transform computing technologies, such as 1D topological semimetals for nanoscale interconnects and 1D topological superconductors for fault-tolerant quantum computing. As such, understanding crystall
Externí odkaz:
https://doaj.org/article/b08624a9fceb4721a5c6d78db9b74a9b
Autor:
David J. Hynek, Elifnaz Onder, James L. Hart, Gangtae Jin, Mengjing Wang, Raivat M. Singhania, Benjamin Davis, Nicholas C. Strandwitz, Judy J. Cha
Publikováno v:
Advanced Materials Interfaces, Vol 10, Iss 11, Pp n/a-n/a (2023)
Abstract Synthesis of transition metal dichalcogenides (TMDCs) has been achieved through the direct conversion of metal and metal‐oxide films, demonstrating the ability to grow large area thin films with uniform thickness on a variety of substrates
Externí odkaz:
https://doaj.org/article/d7c5d0f0eec946abac494cf1062e1b56
Autor:
Suhyeon Kim, Sangho Yoon, Hyobin Ahn, Gangtae Jin, Hyesun Kim, Moon-Ho Jo, Changgu Lee, Jonghwan Kim, Sunmin Ryu
Publikováno v:
ACS Nano. 16:16385-16393
Autor:
David J. Hynek, Elifnaz Onder, James L. Hart, Gangtae Jin, Mengjing Wang, Raivat M. Singhania, Benjamin Davis, Nicholas C. Strandwitz, Judy J. Cha
Publikováno v:
Advanced Materials Interfaces. 10
Autor:
Mehrdad T. Kiani, Quynh P. Sam, Gangtae Jin, Betül Pamuk, Hyeuk Jin Han, James L. Hart, J.R. Stauff, Judy J. Cha
Reduced dimensionality leads to emergent phenomena in quantum materials and there is a need for accelerated materials discovery of nanoscale quantum materials in reduced dimensions. Thermomechanical nanomolding is a rapid synthesis method that produc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3c4146f3bc9bfde39cc322be65136d6a
http://arxiv.org/abs/2210.13392
http://arxiv.org/abs/2210.13392
Publikováno v:
Journal of the Korean Physical Society. 77:127-132
Hot electrons in metal nanostructures can be exploited in a wide range of optical functions, including photocatalysis, surface-enhanced Raman scattering, photodetectors and photovoltaics. Here, we report the sub-band-gap (Eg) photoresponse in Au-nano
Autor:
Min Yeong Park, Suk-Ho Lee, Cheolhee Han, Gangtae Jin, Juho Kim, Seung-Young Seo, Heonsu Ahn, Moon-Ho Jo, Soonyoung Cha, Chang-Soo Lee
Publikováno v:
Chemistry of Materials. 32:5084-5090
Programmed alloying within a van der Waals (vdW) semiconductor monolayer (ML) is achieved by metalorganic vapor-phase epitaxy. Specifically, two versions of on-ML alloying are demonstrated by preci...
Autor:
Hyeuk Jin Han, Sushant Kumar, Gangtae Jin, Xiaoyang Ji, James L. Hart, David J. Hynek, Quynh P. Sam, Vicky Hasse, Claudia Felser, David G. Cahill, Ravishankar Sundararaman, Judy J. Cha
The increasing resistance of Cu interconnects for decreasing dimensions is a major challenge in continued downscaling of integrated circuits beyond the 7-nm technology node as it leads to unacceptable signal delays and power consumption in computing.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::17c0d7b55c56b5d55df73ae07a09327f
Autor:
Gangtae Jin, Hyeuk Jin Han, James L. Hart, Quynh P. Sam, Mehrdad T. Kiani, David J. Hynek, Vicky Hasse, Claudia Felser, Judy J. Cha
Publikováno v:
Applied Physics Letters. 121:113105
Topological semimetals (TSMs) possess topologically protected surface states near the Fermi level with high carrier densities and high mobilities, holding distinct potential for low-dissipation on-chip interconnects that may outperform current copper
Autor:
Gangtae Jin, Chang-Soo Lee, Odongo Francis Okello, Suk-Ho Lee, Min Yeong Park, Soonyoung Cha, Seung-Young Seo, Gunho Moon, Dong-Hwan Yang, Cheolhee Han, Hyungju Ahn, Jekwan Lee, Hyunyong Choi, Jonghwan Kim, Si-Young Choi, Moon-Ho Jo
We report atomic layer-by-layer epitaxial growth of van der Waals (vdW) semiconductor superlattices (SLs) with programmable stacking periodicities, composed of more than two kinds of dissimilar transition-metal dichalcogenide monolayers (MLs), such a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37d357f29c07a9871f30c22457248d39
https://doi.org/10.21203/rs.3.rs-193065/v1
https://doi.org/10.21203/rs.3.rs-193065/v1