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Akademický článek

Response to 'Comments on Seo et al., Materials & Design 117 (2017) 131–138, DOI: 10.1016/j.matdes.2016.12.066'

Autor: Ganggyu Lee, Kangchun Lee, Jinok Moon, Taeseup Song, Dong-Hee Lee, Ungyu Paik

Publikováno v: Materials & Design, Vol 241, Iss , Pp 112935- (2024)

We would like to respond to “Comments on Seo et al., Materials & Design 117 (2017) 131–138, https://doi.org/10.1016/j.matdes.2016.12.066″. Mangindaan et al. raised concerns about deriving the 2nd order equations for optimizing the W-pattern CMP

Externí odkaz: https://doaj.org/article/3d5ef29236004582b176d35218f2dc2d

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Akademický článek

Oxidation differences on Si- versus C-terminated surfaces of SiC during planarization in the fabrication of high-power, high-frequency semiconductor device

Autor: Ganggyu Lee, Yeram Lee, Sungmin Kim, Donghwan Kim, Hongjun Park, Myungju Woo, Taeseup Song, Ungyu Paik

Publikováno v: Scientific Reports, Vol 13, Iss 1, Pp 1-9 (2023)

Abstract Silicon carbide (SiC) wafers have attracted attention as a material for advanced power semiconductor device applications due to their high bandgap and stability at high temperatures and voltages. However, the inherent chemical and mechanical

Externí odkaz: https://doaj.org/article/11ed7e162864453faa1794b26ad23dc2

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Akademický článek

Engineering SiO2 Nanoparticles: A Perspective on Chemical Mechanical Planarization Slurry for Advanced Semiconductor Processing

Autor: Ganggyu Lee, Kangchun Lee, Seho Sun, Taeseup Song, Ungyu Paik

Publikováno v: KONA Powder and Particle Journal, Vol advpub, Iss 0 (2023)

Chemical mechanical polishing (CMP) is a process that uses mechanical abrasive particles and chemical interaction in slurry to remove materials from the surface of films. With advancements in semiconductor device technology applying various materials

Externí odkaz: https://doaj.org/article/950c6ee82cf74e34b984dbba89d62369

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Akademický článek

Galvanic corrosion inhibition from aspect of bonding orbital theory in Cu/Ru barrier CMP

Autor: Kangchun Lee, Seho Sun, Ganggyu Lee, Gyeonghui Yoon, Donghyeok Kim, Junha Hwang, Hojin Jeong, Taeseup Song, Ungyu Paik

Publikováno v: Scientific Reports, Vol 11, Iss 1, Pp 1-10 (2021)

Abstract In this report, the galvanic corrosion inhibition between Cu and Ru metal films is studied, based on bonding orbital theory, using pyridinecarboxylic acid groups which show different affinities depending on the electron configuration of each

Externí odkaz: https://doaj.org/article/1822b3b9da56427e9e2c98bab5bdda69

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