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Publikováno v:
2015 26th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Unexpected yield loss in high-volume DRAM manufacturing occurs very often as an excursion in critical levels such as high aspect ratio container (HARC) etch in capacitor formation in the device. The main failure mode is polymer formation and plasma d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c0323c6a2c3241c56c4828955012701
https://doi.org/10.1109/asmc.2015.7164461
https://doi.org/10.1109/asmc.2015.7164461
