Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Gang Yih Chong"'
Autor:
Jianxun Sun, Yuan Bo Li, Yiyang Ye, Jun Zhang, Gang Yih Chong, Juan Boon Tan, Zhen Liu, Tupei Chen
Publikováno v:
IEEE Access, Vol 8, Pp 4924-4934 (2020)
The resistive switching variability and reliability degradation are the two major challenges that hinder the high-volume production of the Resistive Random Access Memory (RRAM) devices. In this work, a 3D electrode structure engineering method is pro
Externí odkaz:
https://doaj.org/article/67d58393ff0045009077ed728ee3c167
Autor:
Kwang Hong Lee, Shuyu Bao, Gang Yih Chong, Yew Heng Tan, Eugene A. Fitzgerald, Chuan Seng Tan
Publikováno v:
APL Materials, Vol 3, Iss 1, Pp 016102-016102-7 (2015)
A method to remove the misfit dislocations and reduce the threading dislocations density (TDD) in the germanium (Ge) epilayer growth on a silicon (Si) substrate is presented. The Ge epitaxial film is grown directly on the Si (001) donor wafer using a
Externí odkaz:
https://doaj.org/article/b99584ca49c642959e841d818bc1f970
Autor:
Chuan Seng Tan, Gang Yih Chong, Lin Zhang, Kwang Hong Lee, Shaoteng Wu, Qimiao Chen, Bongkwon Son
Publikováno v:
ECS Transactions. 98:91-98
Epitaxial GeSn films present several advantages which can provide the semiconductor devices with higher frequency operation [1-2]. GeSn films have been theoretically and experimentally shown to become direct bandgap materials with about 6-10% of Sn c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b9d2dbae2d12a4a3f564e64da19e718f
https://doi.org/10.1149/09805.0091ecst
https://doi.org/10.1149/09805.0091ecst
Autor:
Kwang Hong Lee, Shuyu Bao, Gang Yih Chong, Yew Heng Tan, Fitzgerald, Eugene A., Chuan Seng Tan
Publikováno v:
Journal of Applied Physics; 2014, Vol. 116 Issue 10, p1-5, 5p, 1 Color Photograph, 2 Black and White Photographs, 5 Graphs
Autor:
Haodong Qiu, P. Anantha, Chuan Seng Tan, Hong Wang, Wei Li, Lin Zhang, Milos Nedeljkovic, Goran Z. Mashanovich, Jordi Soler Penades, Xin Guo, Gang Yih Chong, Callum G. Littlejohns
Publikováno v:
Scopus-Elsevier
The successful fabrication of MIR Ge-on-Si waveguides written by both the high-resolution electron beam lithography (EBL) approach, as well as the wafer scale, high throughput approach using 365 nm i-line stepper lithography is reported. A low propag
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::af0cdd551dc617f908db7ac56083b873
https://doi.org/10.1109/cleopr.2017.8118738
https://doi.org/10.1109/cleopr.2017.8118738
Publikováno v:
ECS Transactions. 64:141-148
Introduction Wafer bonding allows heterogeneous integration of two materials with similar or very different lattice parameters and thermal properties, via an intermediate bonding layer or direct contact. One of its most prominent applications is sili
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::01fdf854ed14707003ff1c8f8e813d82
https://doi.org/10.1149/06405.0141ecst
https://doi.org/10.1149/06405.0141ecst
Publikováno v:
ECS Transactions. 50:17-27
Wafer-level hydrophilic silicon direct bonding is demonstrated using ultraviolet ozone (UVO) activation. The activation is performed at room temperature in atmospheric ambient for 3, 6, 9, and 12 min under UVO exposure, respectively. The activation p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::feb74801c324025cb80c0830a6af618a
https://doi.org/10.1149/05007.0017ecst
https://doi.org/10.1149/05007.0017ecst
Publikováno v:
ECS Journal of Solid State Science and Technology. 1:P18-P22
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6f1f376ad85911f91470c833775a8f3
https://doi.org/10.1149/2.017201jss
https://doi.org/10.1149/2.017201jss
Autor:
Chuan Seng Tan, Gang Yih Chong
Publikováno v:
ECS Transactions. 28:489-498
The bond strength of plasma-enhanced tetraethyl-orthosilicate (PE-TEOS) oxide bonded and annealed at low temperature (300 oC and below) is enhanced using a thin layer of high-K dielectric at the bonding interface. Prior to bonding, thin (~5 nm) cappi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93a564c33b07b4dca04c73a5c95e35ed
https://doi.org/10.1149/1.3372603
https://doi.org/10.1149/1.3372603
Publikováno v:
Electrochemical Society
Homogeneous bonding was successfully demonstrated on 150 mm Si wafers by face-to-face direct dielectric bonding of clean and smooth aluminum nitride (AlN) layers. Characterization result from XPS confirms the layer composition and reveals that approx
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::496f6a4ed872360ba20a7b434ccc0f51
http://hdl.handle.net/1721.1/101884
http://hdl.handle.net/1721.1/101884
