Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Gang Ri Cai"'
Autor:
Xiang Yu Wang, Yuting Chen, Jihun Kim, Yu Yan, Jia Cheng Li, Jin Shi Zhao, Cheol Seong Hwang, Gang Ri Cai, Hyeon Woo Park
Publikováno v:
ACS Applied Materials & Interfaces. 13:39561-39572
In electronic bipolar resistive switching (eBRS), the electron trapping and detrapping at the defect sites within the switching layer, such as the highly defective TiO1.7 in this study, constitute the switching mechanism. It is an appealing candidate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73682140798d92ca0b484ba925d91615
https://doi.org/10.1021/acsami.1c09436
https://doi.org/10.1021/acsami.1c09436
Autor:
Yu, Yan, Jia Cheng, Li, Yu Ting, Chen, Xiang Yu, Wang, Gang Ri, Cai, Hyeon Woo, Park, Ji Hun, Kim, Jin Shi, Zhao, Cheol Seong, Hwang
Publikováno v:
ACS applied materialsinterfaces. 13(33)
In electronic bipolar resistive switching (eBRS), the electron trapping and detrapping at the defect sites within the switching layer, such as the highly defective TiO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::3c913e7ea414cec2a786a1a0b3375c78
https://pubmed.ncbi.nlm.nih.gov/34378371
https://pubmed.ncbi.nlm.nih.gov/34378371