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pro vyhledávání: '"Gang Alan Li"'
Autor:
Yung-Chen Cheng, Cheng-Ming Wu, C. C. Yang, Gang Alan Li, Rosenauer, Andreas, Kung-Jen Ma, Shih-Chen Shi, L. C. Chen
Publikováno v:
Journal of Applied Physics; 7/1/2005, Vol. 98 Issue 1, p014317, 7p, 1 Chart, 7 Graphs
Autor:
Andreas Rosenauer, Kung-Je Ma, Jer-Ren Yang, Meng-Kuo Chen, Zhe Chuan Feng, Yung-Chen Cheng, C. C. Wu, Gang Alan Li, Chih-Chung Yang
Publikováno v:
Applied Physics Letters. 84:5422-5424
The optical properties and nanostructures of two InGaN∕GaN quantum-well (QW) samples of slightly different structures are compared. In one of the samples, InN interfacial layers of a few monolayers are added to the structure between wells and barri
Publikováno v:
CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on Lasers and Electro-Optics (IEEE Cat. No.03TH8671).
We report the variations of optical characteristics in InGaN/GaN quantum well samples with different thin layer (about 1 nm) structures between the wells and barriers, including silicon-doped InN and InGaN compounds.
Publikováno v:
CLEO/Pacific Rim 2003. the 5th Pacific Rim Conference on Lasers & Electro-Optics (IEEE Cat. No.03TH8671); 2003, p70-70, 1p