Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Ganesh Samudra"'
Autor:
Shao Ming Koh, Wei-Jing Zhou, Rinus T. P. Lee, Mantavya Sinha, Chee-Mang Ng, Zhiyong Zhao, Helen Maynard, Naushad Variam, Yuri Erokhin, Ganesh Samudra, Yee-Chia Yeo
Publikováno v:
ECS Meeting Abstracts. :2365-2365
not Available.
Autor:
Grace Huiqi Wang, Eng-Huat Toh, Keat Mun Hoe, Tripathy, S., Balakumar, S., Guo-Qiang Lo, Ganesh Samudra, Yee-Chia Yeo
Publikováno v:
2006 International Electron Devices Meeting; 2006, p1-4, 4p
Publikováno v:
2006 European Solid-State Device Research Conference; 2006, p89-92, 4p
Autor:
King-Jien Chui, Kah-Wee Ang, Anuj Madan, Anyan Du, Chih-Hang Tung, Narayanan Balasubramanian, Ganesh Samudra, Yee-Chia Yeo
Publikováno v:
2006 European Solid-State Device Research Conference; 2006, p85-88, 4p
Autor:
Kah-Wee Ang, King-Jien Chui, Bliznetsov, V., Yihua Wang, Lai Yin Wong, Chih-Hang Tung, Balasubramanian, N., Ming-Fu Li, Ganesh Samudra, Yee-Chia Yeo
Publikováno v:
IEEE International Electron Devices Meeting, 2005. IEDM Technical Digest; 2005, p497-500, 4p
Autor:
King-Jien Chui, Kah-Wee Ang, Anuj Madan, Huiqi Wang, Chih-Hang Tung, Lai-Yin Wong, Yihua Wang, Siew-Fong Choy, Balasubramanian, N., Ming Fu Li, Ganesh Samudra, Yee-Chia Yeo
Publikováno v:
IEEE International Electron Devices Meeting, 2005. IEDM Technical Digest; 2005, p493-496, 4p
Publikováno v:
IEEE Transactions on Circuits & Systems. Part II: Express Briefs; Dec2009, Vol. 56 Issue 12, p946-950, 5p
Publikováno v:
IEEE Electron Device Letters; Nov2008, Vol. 29 Issue 11, p1252-1255, 4p, 3 Graphs
Publikováno v:
IEEE Electron Device Letters; Aug2008, Vol. 29 Issue 8, p841-844, 4p, 4 Graphs
Strain and Materials Engineering for the I-MOS Transistor With an Elevated Impact-Ionization Region.
Publikováno v:
IEEE Transactions on Electron Devices; Oct2007, Vol. 54 Issue 10, p2778-2785, 8p, 6 Black and White Photographs, 13 Graphs