Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Gana Rimple"'
Autor:
David Theodore, Xiaoru Wang, Cait Ni Chleirigh, Michael Canonico, Oluwamuyiwa Olubuyide, Yun Wang, Gana Rimple, Judy L. Hoyt
Publikováno v:
ECS Transactions. 3:355-362
Sub-melt temperature laser spike annealing is investigated as a low thermal budget solution for source/drain annealing in strained Si/ strained Si0.3Ge0.7/relaxed Si0.7Ge0.3 dual channel p-MOSFETs. A constant hole mobility enhancement factor of 4x is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32a49e4c0e67ff84678bd04591f602c7
https://doi.org/10.1149/1.2356295
https://doi.org/10.1149/1.2356295
Autor:
Yun Wang, Xiaoru Wang, Judy L. Hoyt, N. David Theodore, Gana Rimple, Michael Canonico, Cait Ni Chleirigh
Publikováno v:
Journal of Applied Physics. 103:104501
Strained Si/strained Si0.3Ge0.7/relaxed Si0.7Ge0.3 heterostructure p-type metal-oxide-semiconductor field-effect transistors (MOSFETs) with high mobility and low leakage are demonstrated using laser spike annealing, despite a strained Si0.3Ge0.7 chan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87898907102fc3860757f6a48b888bf5
https://doi.org/10.1063/1.2903849
https://doi.org/10.1063/1.2903849
Autor:
Cait Ni Chleirigh, Xiaoru Wang, Gana Rimple, Yun Wang, Michael Canonico, Oluwamuyiwa Olubuyide, Judy L. Hoyt
Publikováno v:
ECS Meeting Abstracts. :1035-1035
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::820800e14e6e022c56a2e916ed2cbd48
https://doi.org/10.1149/ma2006-02/20/1035
https://doi.org/10.1149/ma2006-02/20/1035
Publikováno v:
2014 International Workshop on Junction Technology (IWJT); 2014, p1-4, 4p
Formation of ultrashallow junctions in 500 eV boron implanted silicon using nonmelt laser annealing.
Publikováno v:
12th IEEE International Conference on Advanced Thermal Processing of Semiconductors, 2004. RTP 2004; 2004, p143-147, 5p
Publikováno v:
MRS Online Proceedings Library; 2000, Vol. 610 Issue 1, p1-7, 7p
Publikováno v:
12th IEEE International Conference on Advanced Thermal Processing of Semiconductors, 2004. RTP 2004; 2004, p148-148, 1p