Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Gan Jun-ning"'
Autor:
Gan Jun-ning, Shen Pei, Zhang Wan-rong, Wang Yang, Zhang Wei, Li Jia, Xie Hong-Yun, Jin Dongyue, He Li-jian, Sha Yong-ping
Publikováno v:
Solid-State Electronics. 52:937-940
Multi-finger power SiGe heterojunction bipolar transistors (HBTs) with emitter ballasting resistor and non-uniform finger spacing are fabricated, and temperature profiles of them are measured. Experimental results show that both of them could improve
Publikováno v:
2008 International Conference on Microwave and Millimeter Wave Technology.
A design methodology of Darlington low noise figure (LNA) for application at ultra wide bandwidth using a resistive feedback scheme is proposed. The packaged SiGe heterojunction bipolar transistors (HBTs) BFP740 and chip type passive components were
Autor:
Huang Yi-Wen, Huang Lu, Hu Ning, Shen Pei, Xie Hong-Yun, Zhang Wan-rong, Li Jia, Jin Dongyue, Gan Jun-ning
Publikováno v:
2008 International Conference on Microwave and Millimeter Wave Technology.
A 20-finger power SiGe heterojunction bipolar transistor (HBT) with non-uniform emitter finger length is fabricated to improve the thermal stability. For comparison, a SiGe HBT with traditional uniform emitter linger length is also fabricated. The th
Publikováno v:
2008 International Conference on Microwave and Millimeter Wave Technology.
A feedback topology low-noise amplifier (LNA) using advanced SiGe HBT technology for application in ultra-wideband (UWB) systems is presented in this paper. The design consists of single stage topology in two feedback loops to achieve broadband gain
Autor:
Hu Ning, Li Jia, Xie Hong-Yun, Jin Dongyue, Gan Jun-ning, Zhang Wan-rong, Huang Lu, Shen Pei, Huang Yi-Wen
Publikováno v:
2008 8th International Symposium on Antennas, Propagation and EM Theory.
With a three-dimensional thermal-electrical model, a non-uniform emitter length structure in multi-finger SiGe heterojunction bipolar transistors (HBTs) is presented to improve thermal stability. Compared with the traditional uniform emitter length d
Autor:
Sha Yong-ping, Yin Ji-Xin, Zhang Wei, Wang Yang, Xie Hong-Yun, Zhang Wan-rong, Jin Dongyue, He Li-jian, Gan Jun-ning, Li Jia, Shen Pei
Publikováno v:
2008 2nd IEEE International Nanoelectronics Conference.
This paper proposes the layout design of multi-finger power SiGe HBTs with non-uniform finger spacing to improve the thermal stability. Two types of 20-finger SiGe HBTs with uniform and non-uniform finger spacing are fabricated. Experimental results
Publikováno v:
2008 International Conference on Microwave & Millimeter Wave Technology; 2008, p1372-1375, 4p
Publikováno v:
2008 International Conference on Microwave & Millimeter Wave Technology; 2008, p1330-1333, 4p