Zobrazeno 1 - 10
of 121
pro vyhledávání: '"Gan, Ziyang"'
Autor:
Bucher, Tobias, Fedorova, Zlata, Abasifard, Mostafa, Mupparapu, Rajeshkumar, Wurdack, Matthias J., Najafidehaghani, Emad, Gan, Ziyang, Knopf, Heiko, George, Antony, Eilenberger, Falk, Pertsch, Thomas, Turchanin, Andrey, Staude, Isabelle
The valley degree of freedom is one of the most intriguing properties of atomically thin transition metal dichalcogenides. Together with the possibility to address this degree of freedom by valley-contrasting optical selection rules, it has the poten
Externí odkaz:
http://arxiv.org/abs/2401.13372
Autor:
Lamsaadi, Hassan, Beret, Dorian, Paradisanos, Ioannis, Renucci, Pierre, Lagarde, Delphine, Marie, Xavier, Urbaszek, Bernhard, Gan, Ziyang, George, Antony, Watanabe, Kenji, Taniguchi, Takashi, Turchanin, Andrey, Lombez, Laurent, Combe, Nicolas, Paillard, Vincent, Poumirol, Jean-Marie
Publikováno v:
Nature Communications volume 14, Article number: 5881 (2023)
Being able to control the neutral excitonic flux is a mandatory step for the development of future room-temperature two-dimensional excitonic devices. Semiconducting Monolayer Transition Metal Dichalcogenides (TMD-ML) with extremely robust and mobile
Externí odkaz:
http://arxiv.org/abs/2306.13352
Total hip arthroplasty (THA) is a widely used surgical procedure in orthopedics. For THA, it is of clinical significance to analyze the bone structure from the CT images, especially to observe the structure of the acetabulum and femoral head, before
Externí odkaz:
http://arxiv.org/abs/2306.04579
Autor:
Gan, Ziyang, Zhang, Kaixuan, Gao, Yuan, Chen, Ahai, Zhang, Yizhu, Yan, Tian-Min, Pfeifer, Thomas, Jiang, Yuhai
The nature of electronic motion and structural information of atoms and molecules is encoded into strong-field induced radiations ranging from terahertz (THz) to extreme ultraviolet wavelength. The dependence of THz yields in bi-chromatic laser field
Externí odkaz:
http://arxiv.org/abs/2305.08305
Autor:
Rosati, Roberto, Paradisanos, Ioannis, Huang, Libai, Gan, Ziyang, George, Antony, Watanabe, Kenji, Taniguchi, Takashi, Lombez, Laurent, Renucci, Pierre, Turchanin, Andrey, Urbaszek, Bernhard, Malic, Ermin
The existence of bound charge transfer (CT) excitons at the interface of monolayer lateral heterojunctions has been debated in literature, but contrary to the case of interlayer excitons in vertical heterostructure their observation still has to be c
Externí odkaz:
http://arxiv.org/abs/2302.02617
The orientation and ellipticity of terahertz (THz) polarization generated by two-color strong field not only cast light on underlying mechanisms of laser-matter interaction, but also play an important role for various applications. We develop the Cou
Externí odkaz:
http://arxiv.org/abs/2302.00140
Autor:
Kuppadakkath, Athira, Najafidehaghani, Emad, Gan, Ziyang, Tuniz, Alessandro, Ngo, Gia Quyet, Knopf, Heiko, Löchner, Franz J. F., Abtahi, Fatemeh, Bucher, Tobias, Shradha, Sai, Käsebier, Thomas, Palomba, Stefano, Felde, Nadja, Paul, Pallabi, Ullsperger, Tobias, Schröder, Sven, Szeghalmi, Adriana, Pertsch, Thomas, Staude, Isabelle, Zeitner, Uwe, George, Antony, Turchanin, Andrey, Eilenberger, Falk
We report for the first time the direct growth of Molybdenum disulfide (MoS$_2$) monolayers on nanostructured silicon-on-insulator waveguides. Our results indicate the possibility of utilizing the Chemical Vapour Deposition (CVD) on nanostructured ph
Externí odkaz:
http://arxiv.org/abs/2206.02526
Autor:
Eobaldt, Edwin, Vitale, Francesco, Zapf, Maximilian, Lapteva, Margarita, Hamzayev, Tarlan, Gan, Ziyang, Najafidehaghani, Emad, Neumann, Christof, George, Antony, Turchanin, Andrey, Soavi, Giancarlo, Ronning, Carsten
Publikováno v:
Nanoscale 2022, 14, 6822-6829
Mixed dimensional hybrid structures have recently gained increasing attention as promising building blocks for novel electronic and optoelectronic devices. In this context, hybridization of semiconductor nanowires with two-dimensional materials could
Externí odkaz:
http://arxiv.org/abs/2205.13379
Autor:
Gan, Ziyang, Paradisanos, Ioannis, Estrada-Real, Ana, Picker, Julian, Najafidehaghani, Emad, Davies, Francis, Neumann, Christof, Robert, Cedric, Wiecha, Peter, Watanabe, Kenji, Taniguchi, Takashi, Marie, Xavier, Krasheninnikov, Arkady V., Urbaszek, Bernhard, George, Antony, Turchanin, Andrey
We report one-pot chemical vapor deposition (CVD) growth of large-area Janus SeMoS monolayers, with the asymmetric top (Se) and bottom (S) chalcogen atomic planes with respect to the central transition metal (Mo) atoms. The formation of these two-dim
Externí odkaz:
http://arxiv.org/abs/2205.04751
Autor:
Beret, Dorian, Paradisanos, Ioannis, Gan, Ziyang, dehaghani, Emad Naja, George, Antony, Lehnert, Tibor, Biskupek, Johannes, Shree, Shivangi, Estrada-Real, Ana, Lagarde, Delphine, Poumirol, Jean-Marie, Paillard, Vincent, Watanabe, Kenji, Taniguchi, Takashi, Marie, Xavier, Kaiser, Ute, Renucci, Pierre, Lombez, Laurent, Turchanin, Andrey, Urbaszek, Bernhard
Publikováno v:
npj 2D Materials and Applications, volume 6, Article number: 84 (2022) (with additional near-field data)
Chemical vapor deposition (CVD) allows lateral edge epitaxy of transition metal dichalcogenide heterostructures with potential applications in optoelectronics. Critical for carrier and exciton transport is the quality of the two materials that consti
Externí odkaz:
http://arxiv.org/abs/2204.07351