Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Gan, Nobuko"'
Autor:
Tanaka, Yoichi, Gan, Nobuko, Ogawa, Yuuichi, Iino, Hideaki, Chang, Ren Jie, Homkar, Suvidyakumar, Alessio Verni, Giuseppe, Givens, Michael, Lai, Ju Geng, Pacco, Antoine, Brus, Stephan, Arimura, Hiroaki, Oniki, Yusuke, Altamirano-Sanchez, Efrain, Holsteyns, Frank, Horiguchi, Naoto
Publikováno v:
Diffusion and Defect Data Part B: Solid State Phenomena; August 2023, Vol. 346 Issue: 1 p69-73, 5p
Autor:
Toru Masaoka, Yuichi Ogawa, Gan Nobuko, Frank Holsteyns, Antoine Pacco, Yukifumi Yoshida, Yu Fujimura, Kurt Wostyn
Publikováno v:
Solid State Phenomena. 255:27-30
Ultrapure water contains dilute hydrogen peroxide as an impurity. In order to clarify an impact of the dilute hydrogen peroxide on cleaning processes, a SiGe epitaxial layer was deposited on a Si(100) wafer which surface was treated by HF last proces
Autor:
Frank Holsteyns, Yuichi Ogawa, Paul Mertens, Toru Masaoka, Gan Nobuko, Farid Sebaai, Kurt Wostyn, Tatsuo Nagai
Publikováno v:
ECS Transactions. 69:277-284
Introduction The usage of germanium has recently been considered for the MOSFET channel in order to improve the performance of the integrated semiconductor devices. Since Ge is oxidized easily and dissolves in to the wet solution, much attention is r
Akademický článek
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Autor:
Masaoka, Toru, Gan, Nobuko, Fujimura, Yu, Ogawa, Yuichi, Wostyn, Kurt, Pacco, Antoine, Yoshida, Yukifumi, Holsteyns, Frank
Publikováno v:
Diffusion and Defect Data Part B: Solid State Phenomena; September 2016, Vol. 255 Issue: 1 p27-30, 4p
Autor:
Gan, Nobuko, Ogawa, Yuichi, Nagai, Tatsuo, Masaoka, Toru, Wostyn, Kurt, Sebaai, Farid, Holsteyns, Frank, Mertens, Paul W.
Publikováno v:
ECS Transactions; September 2015, Vol. 69 Issue: 8 p277-284, 8p