Zobrazeno 1 - 10
of 432
pro vyhledávání: '"Gan, C.L."'
Publikováno v:
In Materials Science in Semiconductor Processing September 2024 180
Bonded copper interconnects were created using thermo-compression bonding and the dicing yield was used as an indication of the bond quality. SEM images indicated that the Cu was plastically deformed. Our experimental and modeling results indicate th
Externí odkaz:
http://hdl.handle.net/1721.1/29818
Autor:
Chang, Choon Wai, Choi, Z.-S., Thompson, Carl V., Gan, C.L., Pey, Kin Leong, Choi, Wee Kiong, Hwang, N.
Three terminal âdotted-I’ interconnect structures, with vias at both ends and an additional via in the middle, were tested under various test conditions. Mortalities (failures) were found in right segments with jL value as low as 1250 A/cm, an
Externí odkaz:
http://hdl.handle.net/1721.1/7533
Three dimensional (3-D) integrated circuits can be fabricated by bonding previously processed device layers using metal-metal bonds that also serve as layer-to-layer interconnects. Bonded copper interconnects test structures were created by thermocom
Externí odkaz:
http://hdl.handle.net/1721.1/7372
Autor:
Choi, Z.-S., Gan, C.L., Wei, F., Thompson, Carl V., Lee, J.H., Marieb, T., Maiz, J., Pey, Kin Leong, Choi, Wee Kiong
The median-times-to-failure (t₅₀’s) for straight dual-damascene via-terminated copper interconnect structures, tested under the same conditions, depend on whether the vias connect down to underlaying leads (metal 2, M2, or via-below structures)
Externí odkaz:
http://hdl.handle.net/1721.1/3826
Electromigration experiments have been carried out on straight interconnects that have single vias at each end, and are divided into two segments by a via in the center ("dotted-I" structures). For dotted-i structures in the second metal layer (M2) a
Externí odkaz:
http://hdl.handle.net/1721.1/3835
Electromigration tests on different Cu dual-damascene interconnect tree structures consisting of various numbers of straight via-to-via lines connected at the common middle terminal have been carried out. Like Al-based interconnects, the reliability
Externí odkaz:
http://hdl.handle.net/1721.1/3730
Failure mechanisms observed in electromigration (EM) stressed dual damascene Cu/SiO₂ interconnects trees were studied and simulated. Failure sites with âmelt patch’ or âcrater’ are common for test structures in the top metal layer, th
Externí odkaz:
http://hdl.handle.net/1721.1/3727
Autor:
Wei, F., Hau-Riege, S.P., Gan, C.L., Thompson, Carl V., Clement, J.J., Tay, H.L., Yu, B., Radhakrishnan, M.K., Pey, Kin Leong, Choi, Wee Kiong
The effects of interconnect length on the reliability of dual-damascene Cu metallization have been investigated. As in Al-based interconnects, the lifetimes of Cu lines increase with decreasing length. However, unlike Al-based interconnects, no criti
Externí odkaz:
http://hdl.handle.net/1721.1/3977
Autor:
Gan, C.L., Thompson, Carl V., Pey, Kin Leong, Choi, Wee Kiong, Wei, F., Hau-Riege, S.P., Augur, R., Tay, H.L., Yu, B., Radhakrishnan, M.K.
An investigation has been carried out to determine the fundamental reliability unit of copper dual-damascene metallization. Electromigration experiments have been carried out on straight via-to-via interconnects in the lower metal (M1) and the upper
Externí odkaz:
http://hdl.handle.net/1721.1/3976