Výsledky vyhledávání - "Gamarra, Piero"

Dissertation/ Thesis

Étude de composés semiconducteurs III-N à forte teneur en indium : application à l'optimisation des hétérostructures pour transistors à effet de champ piézo-électriques (HEMT)

Autor: Gamarra, Piero

Cette thèse est une contribution à l'étude de composés semiconducteurs InX Al1-X N à forte teneur en Indium. Ces composés présentent des propriétés très intéressantes pour des applications dans le domaine de l'amplification des hyperfréqu

Externí odkaz: http://www.theses.fr/2013LYO10009

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Akademický článek

In-situ passivation of quaternary barrier InAlGaN/GaN HEMTs

Autor: Gamarra, Piero, Lacam, Cedric, Tordjman, Maurice, Medjdoub, Farid, di Forte-Poisson, Marie-Antoinette

Publikováno v: In Journal of Crystal Growth 15 April 2017 464:143-147

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Optimized ohmic contacts for InAlGaN/GaN HEMTs

Autor: Ruterana, Pierre, Chauvat, Marie, Morales, Magali, Medjdoub, Farid, Gamarra, Piero, Dua, Christian, Delage, Sylvain

Publikováno v: ASDAM 2022-14th International Conference on Advanced Semiconductor Devices and Microsystems
ASDAM 2022-14th International Conference on Advanced Semiconductor Devices and Microsystems, Oct 2022, Smolenice, Slovakia. pp.1-8, ⟨10.1109/ASDAM55965.2022.9966781⟩

International audience; In this work, we have carried out a detailed transmission electron microscopy investigation on ohmic contacts in InAl GaN/GaN high electron mobility transistors consisting of Ti/Al/Ni/Au deposited by evaporation electron beam

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::202eee0c9a5dcd6d20bcd95ed9f1b9b1
https://hal.science/hal-03930667

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Akademický článek

The critical role of N-vacancy on chemical composition fluctuations and degradation of InAlN layer.

Autor: Mohamad, Ranim, Chauvat, Marie Pierre, Kret, Slawomir, Gamarra, Piero, Delage, Sylvain, Hounkpati, Viwanou, Lacam, Cedric, Chen, Jun, Ruterana, Pierre

Publikováno v: Journal of Applied Physics; 6/7/2019, Vol. 125 Issue 21, pN.PAG-N.PAG, 7p, 3 Diagrams, 1 Chart, 3 Graphs

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Akademický článek

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Optimized ohmic contacts for InAlGaN/GaN HEMTs

Autor: Bouazzaoui, Farah, Chauvat, Marie, Morales, Magali, Zegaoui, Malek, Medjdoub, Farid, Gamarra, Piero, Kret, Slawomir, Ruterana, Pierre

Publikováno v: International Symposium on Growth of III-Nitrides
International Symposium on Growth of III-Nitrides, Aug 2018, Warsaw, Poland

International audience; During the last years, the most significant improvement of the contact resistance forAlInN/GaN high electron mobility has been the use of a highly doped n+ GaN layer grown bymolecular beam epitaxy for the source and drain term

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::9d817763efaac93b83f147950795b132
https://hal.science/hal-03287822

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Investigation of InAlN Layers Surface Reactivity after Thermal Annealings: A Complete XPS Study for HEMT

Autor: Bourlier, Y., Bouttemy, M., Patard, Olivier, Gamarra, Piero, Piotrowicz, S., Vigneron, J., Aubry, R., Delage, S., Etcheberry, A.

Publikováno v: ECS Journal of Solid State Science and Technology
ECS Journal of Solid State Science and Technology, IOP Science, 2018, 7 (6), pp.329-338. ⟨10.1149/2.0181806jss]⟩

International audience; The surface chemistry of InAlN ultra-thin layers, having undergone an oxidation procedure usually running through the HEMT fabrication process (850 • C, O 2 and O 2 +Ar) is studied by XPS. The suitability of XPS analysis to

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::977c31b6d1edaaea62891a3466d4a63a
https://hal.uvsq.fr/hal-02975139/document

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