Correlative transmission electron microscopy and electrical properties study of switchable phase-change random access memory line cells

Autor: Dirk J. Gravesteijn, Jlm Oosthoek, Gam Hurkx, K. Attenborough, Marcel A. Verheijen, Bart J. Kooi, F.C. Voogt

Publikováno v: Journal of Applied Physics, 117(6):064504, 064504-1-064504-6. AMER INST PHYSICS
Journal of Applied Physics, 117(6):064504, 1-6. American Institute of Physics

Phase-change memory line cells, where the active material has a thickness of 15 nm, were prepared for transmission electron microscopy (TEM) observation such that they still could be switched and characterized electrically after the preparation. The

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ac401cf210349916e04127c00f9db569
https://doi.org/10.1063/1.4908023

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