Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Galushkov, A."'
Electrical breakdown of the dielectric nanolayer between film electrodes of niobium and an alloy of 50% indium and 50% tin forms a bridge of this alloy between the electrodes. The bridge resistance depends on the breakdown current. The length of the
Externí odkaz:
http://arxiv.org/abs/2204.04536
Autor:
Maksakova, O. V., Lytovchenko, S. V., Beresnev, V. M., Klymenko, S. A., Horokh, D. V., Mazilin, B. O., Kopeykina, M. Y., Klymenko, S. An., Grudnitskii, V. V., Gluhov, O. V., Galushkov, R. S.
Publikováno v:
East European Journal of Physics; 2024, Issue 4, p11-24, 14p
Electrical breakdown of the dielectric nanolayer between film electrodes of niobium and an alloy of 50% indium and 50% tin forms a bridge of this alloy between the electrodes. The bridge resistance depends on the breakdown current. The length of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2aed0b7f066375b189b7d08d8442cdf0
http://arxiv.org/abs/2204.04536
http://arxiv.org/abs/2204.04536
Publikováno v:
Geodesy and Aerophotosurveying. 63:503-505
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c8f5ffba730a2c3692fa5d6a7c4e850
https://doi.org/10.30533/0536-101x-2019-63-5-503-505
https://doi.org/10.30533/0536-101x-2019-63-5-503-505
Autor:
S. A. Galushkov
Publikováno v:
Litʹë i Metallurgiâ, Vol 0, Iss 3, Pp 50-51 (2012)
It is shown that the numerical model of steel wire cord lay, using the finite element method will allow, with a sufficient degree of adequacy, to describe the processes of steel wire cord laying.
Externí odkaz:
https://doaj.org/article/4fbafddcf0814b818774bf6d8f049460
Publikováno v:
Semiconductors. Dec2008, Vol. 42 Issue 13, p1536-1540. 5p. 1 Illustration, 3 Diagrams, 2 Graphs.
Autor:
N. V. Plotnikova, V. V. Amelichev, A. N. Saurov, S. I. Kasatkin, V. V. Lopatin, A. I. Galushkov, A. M. Murav'ev, I. A. Gamarts
Publikováno v:
Automation and Remote Control. 70:1043-1053
Results are presented of the work in the domain of investigation and production of thin-filmed anisotropic magnetoresistive sensors (AMRSs) of the magnetic field and current on the basis of the single-layer or the double-layer metallic ferromagnetic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88cc25298f1c09afbe5725f6ad2627eb
https://doi.org/10.1134/s0005117909060101
https://doi.org/10.1134/s0005117909060101
Publikováno v:
Semiconductors. 42:1536-1540
The results of studying the effect of a dc magnetic field on the operating conditions of an active two-terminal device, including a two-collector bipolar magnetotransistor as a magnetosensitive element in the control circuit are reported. The possibi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::afb1aaa1581ee96c4436e82e79068032
https://doi.org/10.1134/s1063782608130186
https://doi.org/10.1134/s1063782608130186
Publikováno v:
Measurement Techniques. 41:22-26
We present a new bipolar silicon dual-collector lateral magnetotransistor that is sensitive to the component of magnetic induction vectors perpendicular to the chip surface, and we consider a silicon magnetosensitive component for measurement of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dba777e172985419d9d4272a1bb806bd
https://doi.org/10.1007/bf02512121
https://doi.org/10.1007/bf02512121
Publikováno v:
Sensors and Actuators A: Physical. 49:163-166
Experimental investigations of the sensitivity and level of inherent noise of CMOS and bipolar magnetic sensors at temperatures of 300 and 77 K have been carried out. The absolute sensitivities of CMOS sensors are 4 and 20 V T-1 at temperatures of 30
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12a6164173dd443bbc2e250e7c0e3396
https://doi.org/10.1016/0924-4247(95)01028-9
https://doi.org/10.1016/0924-4247(95)01028-9