Zobrazeno 1 - 3
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pro vyhledávání: '"Gallium Nitride (GaN) power devices"'
Autor:
Thierry Lebey, Olivier Goualard, Nicolas Videau, Thierry Meynard, Emmanuel Sarraute, Vincent Bley, Thi Bang Doan
Publikováno v:
IECON
Converter topology, power devices, passives elements and technology are the keys elements to achieve highly efficient and integrated converters. This article discusses each of these items with a point of load converter application in mind. The potent
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6c223a466fec560cf08c0c464cd17638
https://doi.org/10.1109/iecon.2014.7048708
https://doi.org/10.1109/iecon.2014.7048708
Autor:
Nicolas Videau, Thierry Meynard, Julio Brandelero, Vincent Bley, Didier Flumian, Guillaume Fontes, Emmanuel Sarraute
Publikováno v:
WiPDA : IEEE Workshop on Wide Bandgap Power Devices and Applications, Oct. 27-29, 2013, Columbus, OH (USA)
WiPDA : IEEE Workshop on Wide Bandgap Power Devices and Applications, Oct. 27-29, 2013, Columbus, OH (USA), Oct 2013, Columbus, United States. pp.190-193, ⟨10.1109/WiPDA.2013.6695594⟩
WiPDA : IEEE Workshop on Wide Bandgap Power Devices and Applications, Oct. 27-29, 2013, Columbus, OH (USA), Oct 2013, Columbus, United States. pp.190-193, ⟨10.1109/WiPDA.2013.6695594⟩
International audience; More compact power converters can be realized with the recently introduced gallium nitride (GaN) power devices. However, power board layout becomes more critical. In order to reduce switching losses, voltage overshoot and to a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e39f0c66a3f1df2f6494990d039a0094
https://hal.science/hal-03891967
https://hal.science/hal-03891967
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