Zobrazeno 1 - 10
of 167
pro vyhledávání: '"Galkin Konstantin"'
Autor:
Galkin Nikolay, Galkin Konstantin, Kropachev Oleg, Chernev Igor, Dotsenko Sergei, Goroshko Dmitrii, Subbotin Evgenii, Alekseev Aleksey, Migas Dmitry
Publikováno v:
St. Petersburg Polytechnical University Journal: Physics and Mathematics, Vol 15, Iss 3.1 (2022)
In this paper, we report on optimizing the conditions for subsequently growingsingle-phase films of calcium monosilicide (CaSi) and calcium disilicide (CaSi2) on single-crystal silicon by reactive deposition epitaxy (RDE) and molecular beam epitaxy (
Externí odkaz:
https://doaj.org/article/09297c683a564485b9fe44ed21a823db
Autor:
Galkin Konstantin, Kropachev Oleg, Maslov Andrei, Chernev Igor, Subbotin Evgenii, Galkin Nikolay, Alekseev Aleksey, Migas Dmitri
Publikováno v:
St. Petersburg Polytechnical University Journal: Physics and Mathematics, Vol 15, Iss 3.1 (2022)
The work considered the growth, optical properties and emerging interband transitions in Ca2Si films grown on silicon substrates with (111), (001), and (110) orientations at two temperatures (250 °C and 300 °C) using the sacrificial-template method
Externí odkaz:
https://doaj.org/article/3335a83719bb467d9578789644ad6958
Publikováno v:
St. Petersburg Polytechnical University Journal: Physics and Mathematics, Vol 15, Iss 3.1 (2022)
The formation of a porous silicon (por-Si) layer in a thin p-type layer epitaxially grown on n-type silicon, at two anodizing current densities and different anodizing times is studied and a comparison is made of transverse cleavages, surface morphol
Externí odkaz:
https://doaj.org/article/99cb204ed9974610871d380a6660c474
Publikováno v:
St. Petersburg Polytechnical University Journal: Physics and Mathematics, Vol 15, Iss 3.1 (2022)
In this work, the current-voltage and photoelectric spectral characteristics of double heterodiodes por-Si/Si-p/Si-n and a reference diode with a p–n junction at room temperature are analyzed and compared with data on the thickness of porous silico
Externí odkaz:
https://doaj.org/article/72c9d71313394235aaa4accacfe643ee
Autor:
Aysin, Rinat R.1 (AUTHOR) aysin@ineos.ac.ru, Galkin, Konstantin I.2,3 (AUTHOR) glkn@ioc.ac.ru
Publikováno v:
Molecules. Apr2024, Vol. 29 Issue 8, p1704. 8p.
Autor:
Galkin, Konstantin I.
Publikováno v:
In Mendeleev Communications January-February 2023 33(1):1-8
Akademický článek
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Autor:
Galkin, Nikolay G., Galkin, Konstantin N., Dotsenko, Sergei A., Serhiienko, Illia A., Khovaylo, Vladimir V., Gutakovskii, Anton K.
Publikováno v:
In Applied Surface Science 15 November 2021 566