Zobrazeno 1 - 10
of 318
pro vyhledávání: '"Galkin, N."'
Autor:
Galkin, N. A., Pryakhina, T. M.
Publikováno v:
Известия Саратовского университета. Новая серия: Серия «Экономика. Управление. Право», Vol 23, Iss 2, Pp 193-199 (2023)
Introduction. The presumption of knowledge of the law and laws of the state assumes that every citizen knows the necessary amount of legal information sufficient to fulfill the basic obligation to comply with the Constitution and laws of the Russian
Externí odkaz:
https://doaj.org/article/47e838cee7da48f6b592e9ebc12eb174
Autor:
Andrievskii, V. V., Komnik, Yu. F., Berkutov, I. B., Mirzoiev, I. G., Galkin, N. G., Goroshko, D. L.
Publikováno v:
Physics Status Solidi B 251 601 (2014)
The behaviors of resistance, magnetoresistance (up to 5 T), and Hall electromotive force (EMF) with varying temperature (from 10 to 300 K) and measuring current (from 10 mkA to 10 mA) are studied for the Si sample with CrSi2 nanocrystallites (NC) in
Externí odkaz:
http://arxiv.org/abs/1410.3332
Autor:
Galkin, N. G.1 (AUTHOR) ngalk@iacp.dvo.ru, Galkin, K. N.1 (AUTHOR), Chernev, I. M.1 (AUTHOR), Kropachev, O. V.1 (AUTHOR), Goroshko, D. L.1 (AUTHOR), Subbotin, E. Yu.1 (AUTHOR), Migas, D. B.2,3 (AUTHOR)
Publikováno v:
Semiconductors. Dec2022, Vol. 56 Issue 7-12, p382-388. 7p.
Autor:
Galkin, N. G.1 (AUTHOR) ngalk@iacp.dvo.ru, Galkin, K. N.1 (AUTHOR), Chernev, I. M.1 (AUTHOR), Kropachev, O. V.1 (AUTHOR), Goroshko, D. L.1 (AUTHOR), Dotsenko, S. A.1 (AUTHOR), Subbotin, E. Yu.1 (AUTHOR), Migas, D. B.2 (AUTHOR)
Publikováno v:
Semiconductors. Dec2022, Vol. 56 Issue 7-12, p367-381. 15p.
Autor:
Galkin, N. G., Chernev, I. M., Subbotin, E. Yu., Goroshko, O. A., Dotsenko, S. A., Maslov, A. M., Galkin, K. N., Kropachev, O. V., Goroshko, D. L., Samardak, A. Yu., Gerasimenko, A. V., Argunov, E. V.
Publikováno v:
Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques; Apr2024, Vol. 18 Issue 2, p372-383, 12p
Publikováno v:
J.Phys.: Condens.Matter 20 (2008) 164202
We present the findings of the 0.7(2e2/h) feature in the hole quantum conductance staircase that is caused by silicon one-dimensional channels prepared by the split-gate method inside the p-type silicon quantum well (SQW) on the n-type Si (100) surfa
Externí odkaz:
http://arxiv.org/abs/0804.4832
In a recent Letter, Bergsten and co-authors have studied the resistance oscillations with gate voltage and magnetic field in arrays of semiconductor rings and interpreted the oscillatory magnetic field dependence as Altshuler-Aronov-Spivak (AAS) osci
Externí odkaz:
http://arxiv.org/abs/0705.1815
We analyse the conductance of the Aharonov - Bohm (AB) one- dimensional quantum ring touching a quantum wire. The period of the AB oscillations is shown to be dependent strongly on the chemical potential and the Rashba coupling parameter that is in a
Externí odkaz:
http://arxiv.org/abs/cond-mat/0608629