Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Galina Yu. Rudko"'
Autor:
K. M. Naseka, Piryatinski Yuri P, Oksana Isaieva, Alexei Nazarov, S. V. Sevostianov, Galina Yu. Rudko, Dmitriy V. Kysil, Valentyn Tertykh, Viktor Strelchuk, A. V. Vasin, Dariya Savchenko
Publikováno v:
ECS Transactions. 102:55-64
Evolution of photoluminescence of ethanol solutions of Zn(acac) from near UV to VIS was monitored for time period of several months. It has been found that transparent solutions with time colored in light brown that is accompanied by development of s
Autor:
Andriy V Vasin, Dmitriy V. Kysil, Oksana F. Isaieva, Galina Yu. Rudko, K. M. Naseka, Viktor V. Strelchuk, Yuri P, Piryatinski, S. V. Sevostianov, V. A. Tertykh, D. V. Savchenko, Alexei N. Nazarov
Publikováno v:
ECS Meeting Abstracts. :907-907
Photoluminescent carbon nanodots (CDs), a new class of inorganic nanocarbon materials, have become a significant segments of luminescent nanomaterials in last decade. However mechanism of light emission and detailed identification of the light emitti
Autor:
A. I. Klimovskaya, Oleg O. Pikaruk, Evgeniy G. Gule, Igor Petrovych Ostrovskii, Galina Yu. Rudko
Publikováno v:
SPIE Proceedings.
We studied infrared photoluminescence in wire-like silicon crystals grown by gold stimulated CVD technique. Such crystals present the smallest Si-based heterostructure consisting of bulk silicon and a cell-assembled silicon envelope. Cells have spher
Publikováno v:
SPIE Proceedings.
The low temperature photoluminescence technique applied together with Hall and ESR methods elucidated the variation of boron doping impurity behavior in Si:B under thermal annealing at 450 degree(s)C. It is shown that boron impurity p-Si is involved
Publikováno v:
SPIE Proceedings.
Photoluminescence investigations of silicon subjected to such industrial treatments as implantation, high temperature postimplantation annealing, treatment in high frequency discharge plasma, as well as the prolonged thermal annealing with the format
Autor:
Petr S. Smertenko, Tamara Ya. Gorbach, Mikhail Ya. Valakh, Alexandr Dorofeev, S.V. Svechnikov, Galina Yu. Rudko, Vladimir V. Bondarenko
Publikováno v:
Scopus-Elsevier
Photoluminescence (PL) and Fourier transform infrared spectroscopy (FTIR) have been used to characterize porous silicon layers (PSL) exposed to HF destructive etching. The results obtained lend support to the view that chemical passivation, in partic
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