Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Galina I. Voronkova"'
Autor:
Galina I. Voronkova, A.V. Batunina, Robert J. Falster, N.B. Tiurina, A.S. Guliaeva, V. N. Golovina, Vladimir V. Voronkov
Publikováno v:
Thin Solid Films. 518:2350-2353
Nitrogen in Float-Zoned silicon is electrically inactive in as-grown state, but upon annealing, numerous deep centres are generated. In the past, only selected annealing temperatures were tried. In the present study a wide temperature range was inspe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d84e4ef6724133adfa16de019bc804d5
https://doi.org/10.1016/j.tsf.2009.09.126
https://doi.org/10.1016/j.tsf.2009.09.126
Autor:
Galina I. Voronkova, Vladimir V. Voronkov, A.S. Guliaeva, Robert J. Falster, V. N. Golovina, N.B. Tiurina, A.V. Batunina, Marco Cornara
Publikováno v:
Solid State Phenomena. :115-122
The generation of Thermal Donors in Si is a nucleation process controlled by several mobile On clusters. The rate-limiting transitions are found to be O1 O2 and O4 O5. The individual transition rates G12 and G45, and also G23 and G34 are dedu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4765cd8dca79d940f1a53767d344fb70
https://doi.org/10.4028/www.scientific.net/ssp.156-158.115
https://doi.org/10.4028/www.scientific.net/ssp.156-158.115
Publikováno v:
ECS Transactions. 25:25-34
The resistivity measured in dependence of the temperature can be used to deduce the carrier concentration n(T) or p(T), and this technique is more reliable than the conventionally used Hall effect. Yet a parallel measurement of both the resisitivity
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8617ad8cd69b8fade3bcee6c830a32ff
https://doi.org/10.1149/1.3204391
https://doi.org/10.1149/1.3204391
Autor:
A.V. Batunina, Vladimir V. Voronkov, V. N. Golovina, N.B. Tiurina, A.S. Guliaeva, M. G. Milvidski, Galina I. Voronkova, Robert J. Falster
Publikováno v:
Solid State Phenomena. :387-392
The time dependence of thermal donor (TD) concentration, N(t), during annealing at 450oC was measured in samples cut from a single slab of silicon containing bands of grown-in microdefects of different types. An enormous impact of the microdefect typ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80fb87c83cb5665960e94bf955d0fe6e
https://doi.org/10.4028/www.scientific.net/ssp.131-133.387
https://doi.org/10.4028/www.scientific.net/ssp.131-133.387
Autor:
Galina I. Voronkova, Mikhail Milvidski, Vladimir V. Voronkov, Robert Falster, Luca Moiraghi, A.V. Batunina
Publikováno v:
ECS Transactions. 3:225-235
The nitrogen impurity, in nitrogen-doped Float-Zone (FZ) silicon, is known to show no electrical activity in as-grown state, but to produce deep centers after annealing at relatively high temperatures like 900 or 1000{degree sign}C. In the present wo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32889561634e3155b070400cae5a9911
https://doi.org/10.1149/1.2355759
https://doi.org/10.1149/1.2355759
Publikováno v:
Solid State Phenomena. :117-122
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::884448297ea40d3dac45318c6359f6bc
https://doi.org/10.4028/www.scientific.net/ssp.95-96.117
https://doi.org/10.4028/www.scientific.net/ssp.95-96.117
Publikováno v:
ECS Meeting Abstracts. :1947-1947
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50718c333468f72d3d9e5b8822ec24ef
https://doi.org/10.1149/ma2009-02/22/1947
https://doi.org/10.1149/ma2009-02/22/1947