Zobrazeno 1 - 10
of 246
pro vyhledávání: '"Galia, Pozina"'
Autor:
Galia Pozina, Elizaveta I Girshova, Natalia Abrikossova, Carl Hemmingsson, Erkki Lähderanta, Mikhail Kaliteevski
Publikováno v:
New Journal of Physics, Vol 26, Iss 5, p 053028 (2024)
Plasmonic nanoparticles (NPs) have attracted significant attention due to their unique optical properties and broad optoelectronic and photonic applications. We investigate modifications of emission in hybrid structures formed by 60 nm silver NPs and
Externí odkaz:
https://doaj.org/article/e36b821afd8f462d8ea19bbc0ccba3b5
Autor:
Galia Pozina, Carl Hemmingsson, Natalia Abrikossova, Elizaveta I. Girshova, Erkki Lähderanta, Mikhail A. Kaliteevski
Publikováno v:
Nanomaterials, Vol 13, Iss 8, p 1421 (2023)
The combination of plasmonic nanoparticles and semiconductor substrates changes the properties of hybrid structures that can be used for various applications in optoelectronics, photonics, and sensing. Structures formed by colloidal Ag nanoparticles
Externí odkaz:
https://doaj.org/article/bf9dbd4638e848d58be4772187e09ea8
Publikováno v:
Scientific Reports, Vol 10, Iss 1, Pp 1-9 (2020)
Abstract Gallium oxide is a promising semiconductor with great potential for efficient power electronics due to its ultra-wide band gap and high breakdown electric field. Optimization of halide vapor phase epitaxy growth of heteroepitaxial $$\upbeta$
Externí odkaz:
https://doaj.org/article/4115b35e989449199b6203ec563fa32b
Autor:
Heyong Wang, Felix Utama Kosasih, Hongling Yu, Guanhaojie Zheng, Jiangbin Zhang, Galia Pozina, Yang Liu, Chunxiong Bao, Zhangjun Hu, Xianjie Liu, Libor Kobera, Sabina Abbrent, Jiri Brus, Yizheng Jin, Mats Fahlman, Richard H. Friend, Caterina Ducati, Xiao-Ke Liu, Feng Gao
Publikováno v:
Nature Communications, Vol 11, Iss 1, Pp 1-9 (2020)
The field of perovskite light-emitting diodes witnesses rapid development in both device processing strategies and performances. Here Wang et al. develop high-quality perovskite-molecule composite thin films and achieve high quantum efficiency of 17.
Externí odkaz:
https://doaj.org/article/28d4171188c744b2bf087d7a33d765d9
Publikováno v:
Crystals, Vol 13, Iss 3, p 373 (2023)
Developing growth techniques for the manufacture of wide band gap III-nitrides semiconductors is important for the further improvement of optoelectronic applications. A plasma-assisted halide phase vapor epitaxy (PA-HVPE) approach is demonstrated for
Externí odkaz:
https://doaj.org/article/8853342a8fc6424e89e69b789e61b335
Publikováno v:
Crystals, Vol 12, Iss 12, p 1790 (2022)
The development of growth processes for the synthesis of high-quality epitaxial layers is one of the requirements for utilizing the ultrawide band gap semiconductor Ga2O3 for high-voltage, high-power electronics. A halide vapor phase epitaxy (HVPE) p
Externí odkaz:
https://doaj.org/article/db22b3674a0048e69bf9e4efb7033a5a
Autor:
Galia Pozina, Azat R. Gubaydullin, Maxim I. Mitrofanov, Mikhail A. Kaliteevski, Iaroslav V. Levitskii, Gleb V. Voznyuk, Evgeniy E. Tatarinov, Vadim P. Evtikhiev, Sergey N. Rodin, Vasily N. Kaliteevskiy, Leonid S. Chechurin
Publikováno v:
Scientific Reports, Vol 8, Iss 1, Pp 1-10 (2018)
Abstract We have developed a method to fabricate GaN planar nanowires and cavities by combination of Focused Ion Beam (FIB) patterning of the substrate followed by Metal Organic Vapor Phase Epitaxy (MOVPE). The method includes depositing a silicon ni
Externí odkaz:
https://doaj.org/article/b2748e62604b4357b63fc69663388f22
Autor:
Mathias Forsberg, Elena Alexandra Serban, Ching-Lien Hsiao, Muhammad Junaid, Jens Birch, Galia Pozina
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-7 (2017)
Abstract Novel hybrid organic-inorganic nanostructures fabricated to utilize non-radiative resonant energy transfer mechanism are considered to be extremely attractive for a variety of light emitters for down converting of ultaviolet light and for ph
Externí odkaz:
https://doaj.org/article/8ca5da96343548a9a1bbf5fafbac0b71
Publikováno v:
Crystals; Volume 12; Issue 12; Pages: 1790
The development of growth processes for the synthesis of high-quality epitaxial layers is one of the requirements for utilizing the ultrawide band gap semiconductor Ga2O3 for high-voltage, high-power electronics. A halide vapor phase epitaxy (HVPE) p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=multidiscipl::ab645dd02d9880ef71dce2b3d95c2ac8
Autor:
Daniil A. Livshits, Andrew P. Monkman, K. M. Morozov, Konstantin A. Ivanov, M. A. Kaliteevski, Alexey V. Belonovski, Elizaveta I. Girshova, Larissa Gomes Franca, Galia Pozina, Piotr Pander, N. Selenin
Publikováno v:
The Journal of Physical Chemistry C. 125:8376-8381
The properties of the ultrastrongly coupled Tamm plasmon cavity filled with a high-oscillator-strength organic material DPAVBi (4,4′-bis[4-(di-p-tolylamino)styryl]biphenyl) are studied using theore...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f76ac231dadd8addf6dab84a71e85fc
https://doi.org/10.1021/acs.jpcc.1c02432
https://doi.org/10.1021/acs.jpcc.1c02432