Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Galenchik, Vadim"'
Publikováno v:
Phys. Low-Dim. Struct. 2, 87-90 (2006)
In this paper the scattering rates of electrons in thin free standing GaAs quantum wires in the electric quantum limit are calculated self-consistently taking into account the collisional broadening caused by scattering processes. The following mecha
Externí odkaz:
http://arxiv.org/abs/cond-mat/0606239
Publikováno v:
Physica Status Solidi (b) 242 (15), R134-R136 (2005)
Self-consistent calculations of acoustic and polar optical phonon scattering rates in GaAs quantum wire transistor structures were carried out with account of collisional broadening. The influence of the gate bias on the scattering rates was examined
Externí odkaz:
http://arxiv.org/abs/cond-mat/0604200
Publikováno v:
Phys. Low-Dim. Struct. 1, 19-24 (2006)
An approach to calculation of the ionized impurity and surface roughness scattering rates of electrons in very thin semiconductor quantum wires taking into account the energy level broadening is worked out. It is assumed that all the electrons in the
Externí odkaz:
http://arxiv.org/abs/cond-mat/0604177
Autor:
Pozdnyakov, Dmitry, Galenchik, Vadim
Publikováno v:
Phys. Low-Dim. Struct. 1, 17-19 (2006)
In this study a method for calculation of the electron-phonon scattering rate in semiconductor structures with one-dimensional electron gas is developed. The energy uncertainty of electrons is taken into account.
Comment: 3 pages
Comment: 3 pages
Externí odkaz:
http://arxiv.org/abs/cond-mat/0604125
Publikováno v:
Physica E: Low-Dim. Syst. Nanostr. 33 (2), 336-342 (2006)
The rates of electron scattering via phonons in the armchair single-wall carbon nanotubes were calculated by using the improved scattering theory within the tight-binding approximation. Therefore, the problem connected with the discrepancy of the sca
Externí odkaz:
http://arxiv.org/abs/cond-mat/0604121
Publikováno v:
Nanoscale Research Letters, Vol 2, Iss 4, Pp 213-218 (2007)
AbstractIn the framework of quantum perturbation theory the self-consistent method of calculation of electron scattering rates in nanowires with the one-dimensional electron gas in the quantum limit is worked out. The developed method allows both the
Externí odkaz:
https://doaj.org/article/0be5f4d4779a4ba4a8cac3b6409aa655
Autor:
Borzdov, Vladimir, Komarov, Fadei, Zhevnyak, Oleg, Galenchik, Vadim, Pozdnyakov, Dmitry, Borzdov, Andrei
Publikováno v:
Proceedings of SPIE; Nov2006 Part 2, Issue 1, p62601E-62601E-8, 8p
Autor:
Borzdov, Vladimir, Komarov, Fadei, Galenchik, Vadim, Pozdnyakov, Dmitry, Borzdov, Andrey, Zhevnyak, Oleg
Publikováno v:
Proceedings of SPIE; Nov2006 Part 2, Issue 1, p62601N-62601N-11, 11p
Publikováno v:
Proceedings of SPIE; Nov2006 Part 2, Issue 1, p63280Y-63280Y-9, 9p
Ensemble Monte Carlo simulation of submicron n-channel MOSFETs with account of hot electron effects.
Publikováno v:
Proceedings of SPIE; Nov2004, Issue 1, p634-641, 8p