Zobrazeno 1 - 10
of 791
pro vyhledávání: '"Galeckas, A."'
Autor:
Azarov, Alexander, Galeckas, Augustinas, Cora, Ildikó, Fogarassy, Zsolt, Venkatachalapathy, Vishnukanthan, Monakhov, Eduard, Kuznetsov, Andrej
Gallium oxide (Ga2O3) can be crystallized in several polymorphs exhibiting different physical properties. In this work, polymorphic structures consisting of the cubic defective spinel (gamma) film on the top of the monoclinic (beta) substrate were fa
Externí odkaz:
http://arxiv.org/abs/2405.20011
Autor:
Azarov, Alexander, Radu, Cristian, Galeckas, Augustinas, Mercioniu, Ionel Florinel, Cernescu, Adrian, Venkatachalapathy, Vishnukanthan, Monakhov, Edouard, Djurabekova, Flyura, Ghica, Corneliu, Zhao, Junlei, Kuznetsov, Andrej
Polymorphism contributes to the diversity of nature, so that even materials having identical chemical compositions exhibit variations in properties because of different lattice symmetries. Thus, if stacked together into multilayers, polymorphs may wo
Externí odkaz:
http://arxiv.org/abs/2404.19572
Autor:
Karsthof, Robert, Frodason, Ymir Kalmann, Galeckas, Augustinas, Weiser, Philip Michael, Zviagin, Vitaly, Grundmann, Marius
Nickel oxide is a versatile p-type semiconducting oxide with many applications in opto-electronic devices, but high doping concentrations are often required to achieve necessary electrical conductivity. In contrast to many other transparent oxide sem
Externí odkaz:
http://arxiv.org/abs/2205.02606
Autor:
Lemva Ousdal, Erlend, Etzelmüller Bathen, Marianne, Galeckas, Augustinas, Kuznetsov, Andrej, Vines, Lasse
Publikováno v:
Journal of Applied Physics; 6/14/2024, Vol. 135 Issue 22, p1-9, 9p
Autor:
Bathen, Marianne Etzelmüller, Karsthof, Robert, Galeckas, Augustinas, Kumar, Piyush, Kuznetsov, Andrej Yu., Grossner, Ulrike, Vines, Lasse
Publikováno v:
In Materials Science in Semiconductor Processing 15 June 2024 176
Autor:
Jagerová, Adéla, Malinský, Petr, Sofer, Zdeněk, Plutnarová, Iva, Vronka, Marek, Azarov, Alexander, Galeckas, Augustinas, Macková, Anna
Publikováno v:
In Journal of Alloys and Compounds 30 May 2024 986
Autor:
Ylva K. Hommedal, Ymir K. Frodason, Augustinas Galeckas, Lasse Vines, Klaus Magnus H. Johansen
Publikováno v:
APL Materials, Vol 12, Iss 2, Pp 021109-021109-6 (2024)
Zn-related defects in β-Ga2O3 were studied using photoluminescence (PL) spectroscopy combined with hybrid functional calculations and secondary ion mass spectrometry. We have in-diffused Zn by heat treatments of β-Ga2O3 in Zn vapor to promote the f
Externí odkaz:
https://doaj.org/article/a74cbd02753743e691941908bf9cc982
Autor:
Vásquez, G. C., Bathen, M. E., Galeckas, A., Bazioti, C., Johansen, K. M., Maestre, D., Cremades, A., Prytz, Ø., Moe, A. M., Kuznetsov, A. Yu., Vines, L.
Single-photon emitting point defects in semiconductors have emerged as strong candidates for future quantum technology devices. In the present work, we exploit crystalline particles to investigate relevant defect localizations, emission shifting and
Externí odkaz:
http://arxiv.org/abs/2011.02758
The development of defect populations after proton irradiation of n-type 4H-SiC and subsequent annealing experiments is studied by means of deep level transient (DLTS) and photoluminescence (PL) spectroscopy. A comprehensive model is suggested descri
Externí odkaz:
http://arxiv.org/abs/2007.03985
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