Zobrazeno 1 - 10
of 43
pro vyhledávání: '"Gaiduk Peter"'
Autor:
Novikau Andrei, Gaiduk Peter
Publikováno v:
Open Physics, Vol 8, Iss 1, Pp 57-60 (2010)
Externí odkaz:
https://doaj.org/article/b517d69cddce4078a3b62840ad6abe8f
Publikováno v:
Nanoscale Research Letters, Vol 6, Iss 1, p 148 (2011)
Abstract A two-dimensional layers of metal (Me) nanocrystals embedded in SiO2 were produced by pulsed laser deposition of uniformly mixed Si:Me film followed by its furnace oxidation and rapid thermal annealing. The kinetics of the film oxidation and
Externí odkaz:
https://doaj.org/article/a02a50df4d5544b0b95497448bba9574
Autor:
Chizh, Kirill V., Arapkina, Larisa V., Stavrovsky, Dmitry B., Gaiduk, Peter I., Yuryev, Vladimir A.
Publikováno v:
Materials Science in Semiconductor Processing 99 (2019) 78-84
In the paper, the processes occurring during low-temperature growth of non-hydrogenated amorphous Si and polycrystalline Si films on multilayer Si$_3$N$_4$/SiO$_2$/c-Si substrates from molecular beams under conditions of ultrahigh vacuum are studied
Externí odkaz:
http://arxiv.org/abs/1901.10748
Autor:
Roesgaard, Søren, Chevallier, Jacques, Gaiduk, Peter I., Hansen, John Lundsgaard, Jensen, Pia Bomholt, Larsen, Arne Nylandsted, Svane, Axel, Balling, Peter, Julsgaard, Brian
Tin-containing nanocrystals, embedded in silicon, have been fabricated by growing an epitaxial layer of Si_{1-x-y}Sn_{x}C_{y}, where x = 1.6 % and y = 0.04 %, followed by annealing at various temperatures ranging from 650 to 900 degrees C. The nanocr
Externí odkaz:
http://arxiv.org/abs/1504.07759
Autor:
Kjeldsen, Mads Møgelmose, Hansen, John Lundsgaard, Pedersen, Thomas Garm, Gaiduk, Peter, Larsen, Arne Nylandsted
The optical properties of metallic tin nanoparticles embedded in silicon-based host materials were studied. Thin films containing the nanoparticles were produced using RF magnetron sputtering followed by ex situ heat treatment. Transmission electron
Externí odkaz:
http://arxiv.org/abs/1005.5226
Autor:
Novikau, Andrei G., Gaiduk, Peter I.
A 2D layer of spherical, crystalline Ge nanodots embedded in SiO2 was formed by low pressure chemical vapour deposition combined with furnace oxidation and rapid thermal annealing. The samples were characterized structurally by using transmission ele
Externí odkaz:
http://arxiv.org/abs/0812.4680
Autor:
Juluri, Raghavendra Rao, Gaiduk, Peter, Hansen, John Lundsgaard, Larsen, Arne Nylandsted, Julsgaard, Brian
Publikováno v:
In Thin Solid Films 30 September 2018 662:103-109
Publikováno v:
In Thin Solid Films 2008 516(12):3791-3795
Publikováno v:
In Vacuum 16 August 2001 63(4):657-663