Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Gai Chenguang"'
Publikováno v:
ECS Transactions. 60:413-424
MHM (Metal Hard Mask) AIO (All-In-One) etch is one of key BEOL (Back-End-Of-Line) processes for 40/45nm technology node and beyond. In this work, we focus on some key issues and solutions that we encountered during 40nm MHM AIO etch process developme
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9cc9a10cd13d6078c6a431def71c7476
https://doi.org/10.1149/06001.0413ecst
https://doi.org/10.1149/06001.0413ecst
Publikováno v:
2015 China Semiconductor Technology International Conference.
Cu process and low-k material are wildly used to reduce Rc delay effect from 45nm technology node and beyond, dry etch to low-k material is one of big challenges in BEOL (Back-End-of-Line) process. For M1 trench etch, the main parameters, such as M1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::643435f70b71bfb875083934273f93ce
https://doi.org/10.1109/cstic.2015.7153378
https://doi.org/10.1109/cstic.2015.7153378
Autor:
Li Runling, Li Quanbo, Yi Chunyan, Chong Ermin, Huang Jun, Ma Zhibiao, Zhang Yu, Albert Pang, Gai Chenguang
Publikováno v:
2015 China Semiconductor Technology International Conference.
The gate for FinFET structure is graved into a 3D architecture just as a fin fork so that we can control device on/off through the surfaces of its top and two sides. Such design can greatly improve the controllability of circuit and reduce leakage an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aeb72bcc795a8da07552a11d73354606
https://doi.org/10.1109/cstic.2015.7153391
https://doi.org/10.1109/cstic.2015.7153391
Autor:
Li-Yan Zhang, Xu Zhang, Gai Chenguang, Hong-Rui Ren, Jun Huang, Shugen Pen, Yu Zhang, Qiang Ge
Publikováno v:
2015 China Semiconductor Technology International Conference.
Metal Hard Mask (MHM)-All In One (AIO) technology has been widely used in the process flow of copper inter-connect since 28 nm technology node and below. This is because AF immersion exposure technology reaches its limitation for line edge roughness
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b91b6db4e9778610b0db799d679b7c88
https://doi.org/10.1109/cstic.2015.7153376
https://doi.org/10.1109/cstic.2015.7153376
Publikováno v:
2015 China Semiconductor Technology International Conference.
To reduce the RC interconnect delays and cross-talk noise associated with the sub-28 nm advanced CMOS technology nodes, Dual Damascene process combined with Ultra low-k material needs to be introduced into Integrated Circuits manufacturing. With pore
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61b0da3702ff1247960bcd62da6a1196
https://doi.org/10.1109/cstic.2015.7153375
https://doi.org/10.1109/cstic.2015.7153375
Autor:
Huang Jun, Li Quanbo, Chong Ermin, Yi Chunyan, Li Runling, Gai Chenguang, Ma Zhibiao, Zhang Yu, Albert Pang
Publikováno v:
2015 China Semiconductor Technology International Conference; 2015, p1-4, 4p
Publikováno v:
Macromolecular Materials & Engineering. Oct2017, Vol. 302 Issue 10, pn/a-N.PAG. 14p.
Publikováno v:
2015 China Semiconductor Technology International Conference; 2015, p1-20, 20p
Publikováno v:
2015 China Semiconductor Technology International Conference; 2015, p1-18, 18p
Autor:
Irene Eber
The study discusses the history of the Jewish refugees within the Shanghai setting and its relationship to the two established Jewish communities, the Sephardi and Russian Jews. Attention is also focused on the cultural life of the refugees who used
