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pro vyhledávání: '"Gaggl, Philipp"'
In this paper we review the models and their parameters to describe the relative permittivity, bandgap, impact ionization, mobility, charge carrier recombination/effective masses and incomplete dopand ionization of 4H silicon carbide in computer simu
Externí odkaz:
http://arxiv.org/abs/2410.06798
Autor:
Burin, Jürgen, Hahn, Christopher, Gaggl, Philipp, Gsponer, Andreas, Waid, Simon, Bergauer, Thomas
To increase the scientific output of particle physics experiments, upgrades are underway at all major accelerator facilities to significantly improve the luminosity. Consequently, the solid-state detectors used in the experiments will exhibit more se
Externí odkaz:
http://arxiv.org/abs/2407.16710
Autor:
Gaggl, Philipp, Burin, Jürgen, Gsponer, Andreas, Waid, Simon Emanuel, Thalmeier, Richard, Bergauer, Thomas
Silicon Carbide (SiC) has several advantageous properties compared to Silicon (Si) that make it an appealing detector material, such as a larger charge carrier saturation velocity, bandgap, and thermal conductivity. While the current understanding of
Externí odkaz:
http://arxiv.org/abs/2407.11776
Autor:
Waid, Simon, Gsponer, Andreas, Renner, Elisabeth, Schmitzer, Claus, Kühteubl, Florian, Becker, Clara, Burin, Jürgen, Gaggl, Philipp, Prokopovich, Dale, Bergauer, Thomas
One challenge on the path to delivering FLASH-compatible beams with a synchrotron is facilitating an accurate dose-control for the required ultra-high dose rates. We propose the use of pulsed RFKO extraction instead of continuous beam delivery as a w
Externí odkaz:
http://arxiv.org/abs/2311.08960
Autor:
Gsponer, Andreas, Knopf, Matthias, Gaggl, Philipp, Burin, Jürgen, Waid, Simon, Bergauer, Thomas
For 4H silicon carbide (4H-SiC), the values for the electron-hole pair creation energy $\epsilon_{\text{i}}$ published in the literature vary significantly. This work presents an experimental determination of $\epsilon_{\text{i}}$ using $50$ $\mu$m 4
Externí odkaz:
http://arxiv.org/abs/2311.03902
Autor:
Waid, Simon, Gsponer, Andreas, Maier, Jürgen, Gaggl, Philipp, Thalmeier, Richard, Bergauer, Thomas
The extremely low dark current of silicon carbide (SiC) detectors, even after high-fluence irradiation, was utilized to develop a beam monitoring system for a wide range of particle rates, i.e., from the kHz to the GHz regime. The system is completel
Externí odkaz:
http://arxiv.org/abs/2310.14996
Autor:
Gsponer, Andreas, Gaggl, Philipp, Maier, Jürgen, Thalmeier, Richard, Waid, Simon Emanuel, Bergauer, Thomas
Silicon carbide (SiC) is a wide band gap semiconductor and an attractive candidate for applications in harsh environments such as space, fusion, or future high luminosity colliders. Due to the large band gap, the leakage currents in SiC devices are e
Externí odkaz:
http://arxiv.org/abs/2310.02047
Autor:
Gaggl, Philipp, Gsponer, Andreas, Thalmeier, Richard, Waid, Simon, Pellegrini, Giulio, Godignon, Philippe, Rafí, Joan Marc, Bergauer, Thomas
The unique electrical and material properties of 4H-silicon-carbide (4H-SiC) make it a promising candidate material for high rate particle detectors. In contrast to the ubiquitously used silicon (Si), 4H-SiC offers a higher carrier saturation velocit
Externí odkaz:
http://arxiv.org/abs/2210.08570
Autor:
Gaggl, Philipp, Burin, Jürgen, Gsponer, Andreas, Waid, Simon-Emanuel, Thalmeier, Richard, Bergauer, Thomas
Publikováno v:
In Nuclear Inst. and Methods in Physics Research, A January 2025 1070 Part 1
Autor:
Gsponer, Andreas, Knopf, Matthias, Gaggl, Philipp, Burin, Jürgen, Waid, Simon, Bergauer, Thomas
Publikováno v:
In Nuclear Inst. and Methods in Physics Research, A July 2024 1064