Sodium-Controlled Interfacial Resistive Switching in Thin Film Niobium Oxide for Neuromorphic Applications.

Autor: Gaggio B; Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, U.K., Jan A; Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, U.K., Muller M; Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, U.K., Salonikidou B; Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, U.K., Bakhit B; Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, U.K.; Electrical Engineering Division, Department of Engineering, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0FA, U.K.; Thin Film Physics Division, Department of Physics, Chemistry and Biology (IFM), Linköping University, Linköping SE-581 83, Sweden., Hellenbrand M; Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, U.K., Di Martino G; Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, U.K., Yildiz B; Department of Nuclear Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, United States.; Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, United States., MacManus-Driscoll JL; Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, U.K.

Publikováno v: Chemistry of materials : a publication of the American Chemical Society [Chem Mater] 2024 May 31; Vol. 36 (11), pp. 5764-5774. Date of Electronic Publication: 2024 May 31 (Print Publication: 2024).

Degradation mechanism of hybrid tin-based perovskite solar cells and the critical role of tin (IV) iodide.

Autor: Lanzetta L; Department of Chemistry and Centre for Processable Electronics, Molecular Sciences Research Hub, Imperial College London, London, UK., Webb T; Department of Chemistry and Centre for Processable Electronics, Molecular Sciences Research Hub, Imperial College London, London, UK., Zibouche N; Department of Chemistry, University of Bath, Bath, UK., Liang X; Department of Chemistry and Centre for Processable Electronics, Molecular Sciences Research Hub, Imperial College London, London, UK., Ding D; Department of Chemistry and Centre for Processable Electronics, Molecular Sciences Research Hub, Imperial College London, London, UK., Min G; Department of Chemistry and Centre for Processable Electronics, Molecular Sciences Research Hub, Imperial College London, London, UK., Westbrook RJE; Department of Chemistry and Centre for Processable Electronics, Molecular Sciences Research Hub, Imperial College London, London, UK., Gaggio B; Department of Chemistry and Centre for Processable Electronics, Molecular Sciences Research Hub, Imperial College London, London, UK., Macdonald TJ; Department of Chemistry and Centre for Processable Electronics, Molecular Sciences Research Hub, Imperial College London, London, UK., Islam MS; Department of Chemistry, University of Bath, Bath, UK. m.s.islam@bath.ac.uk., Haque SA; Department of Chemistry and Centre for Processable Electronics, Molecular Sciences Research Hub, Imperial College London, London, UK. s.a.haque@imperial.ac.uk.

Publikováno v: Nature communications [Nat Commun] 2021 May 14; Vol. 12 (1), pp. 2853. Date of Electronic Publication: 2021 May 14.

Enhancing CsSn0.5Ge0.5I3 Perovskite Solar Cell Performance via Cu2O Hole Transport Layer Integration.

Autor: Rayhan, Abu¹ (AUTHOR), Khan, M. A.¹ (AUTHOR), Islam, Md. Rabiul¹ (AUTHOR)

Publikováno v: International Journal of Photoenergy. 4/30/2024, Vol. 2024, p1-17. 17p.

The Defect Passivation of Tin Halide Perovskites Using a Cesium Iodide Modification.

Autor: He, Linfeng¹ (AUTHOR) 2021021047@bistu.edu.cn, Cheng, Jin¹ (AUTHOR) chengjin@bistu.edu.cn, Zhao, Longjiang² (AUTHOR) honghuzlj@qfnu.edu.cn, Chen, Xinyao^1,3 (AUTHOR) xpzou2014@163.com, Zou, Xiaoping¹ (AUTHOR) zhangcq@bistu.edu.cn, Zhang, Chunqian¹ (AUTHOR), Li, Junming^1,4 (AUTHOR)

Publikováno v: Molecules. Sep2023, Vol. 28 Issue 17, p6414. 10p.

Ceiling of Barium Substitution for B-Site Cation in Organometal Halide Perovskite Solar Cells.

Autor: Hsiao, Kai-Chi, Ho, Ching-Mei, Lin, Ting-Han, Chen, Shih-Hsuan, Chang, Yin-Hsuan, Liao, Ying-Han, Chang, Jia-Mao, Lin, Tz-Feng, Huang, Yu-Ching, Lee, Kun-Mu, Wu, Ming-Chung

Publikováno v: International Journal of Energy Research; 1/23/2024, p1-14, 14p