Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Gaetano Parascandolo"'
Autor:
Fanny Meillaud, Christophe Ballif, Simon Hänni, Gaetano Parascandolo, Matthieu Despeisse, Mathieu Boccard, Jordi Escarré, Grégory Bugnon
Publikováno v:
Progress in Photovoltaics: Research and Applications. 21:821-826
This short communication highlights our latest results towards high-efficiency microcrystalline silicon single-junction solar cells. By combining adequate cell design with high-quality material, a new world record efficiency was achieved for single-j
Autor:
Duncan T. L. Alexander, Laura Ding, Corsin Battaglia, Christophe Ballif, Mathieu Boccard, Fanny Meillaud, Grégory Bugnon, Matthieu Despeisse, Jordi Escarré, Marco Cantoni, Simon Hänni, Gaetano Parascandolo, Peter Cuony, Sylvain Nicolay
Publikováno v:
Scopus-Elsevier
This paper gives new insights into the role of both the microstructure and the interfaces in microcrystalline silicon (μc- Si) single-junction solar cells. A 3-D tomographic reconstruction of a μc-Si solar cell reveals the 2-D nature of the porous
Autor:
Linus Lofgren, Corsin Battaglia, Mathieu Charrière, Gaetano Parascandolo, Fanny Meillaud, Thomas Söderström, Grégory Bugnon, Simon Hänni, Christophe Ballif, Matthieu Despeisse, Peter Cuony, Mathieu Boccard
Publikováno v:
physica status solidi (a). 208:1863-1868
Doped layers made of nanostructured silicon phases embedded in a silicon oxide matrix were implemented in thin film silicon solar cells. Their combination with optimized deposition processes for the silicon intrinsic layers is shown to allow for an i
Autor:
Gaetano Parascandolo, Benjamin Strahm, Andrea Feltrin, A. C. Bronneberg, R. Bartlome, Grégory Bugnon, Christophe Ballif
Publikováno v:
Solar Energy Materials and Solar Cells, 95(1), 134-137. Elsevier
Hydrogenated microcrystalline silicon (µc-Si:H) growth by very high frequency plasma-enhanced chemical vapor deposition (VHF-PECVD) is studied in an industrial-type parallel plate KAI reactor. Combined plasma and material characterization techniques
Autor:
Didier Domine, Andrea Feltrin, Christophe Ballif, M. Python, Julien Bailat, S. Faÿ, Adrian Billet, Grégory Bugnon, Gaetano Parascandolo, Nicolas Wyrsch, Peter Buehlmann, Fanny Meillaud, Arvind Shah
Publikováno v:
Philosophical Magazine. 89:2599-2621
This contribution presents the status of amorphous and microcrystalline silicon solar cells on glass, and discusses some material/fabrication factors that presently limit their conversion efficiency. Particular attention is focused on recent results
Publikováno v:
physica status solidi (b). 245:1085-1088
We study the system of two quantum dots lying on the central plane of a planar semiconductor microcavity. By solving the full Maxwell problem, we demonstrate that the rate of resonant excitation transfer between the two dots decays as d(-12) as a fun
Autor:
Mathieu Boccard, R. Bartlome, Christophe Ballif, J. Holovsky, Simon Hänni, Thomas Söderström, Grégory Bugnon, Gaetano Parascandolo, Matthieu Despeisse, Peter Cuony, Fanny Meillaud
Publikováno v:
2011 37th IEEE Photovoltaic Specialists Conference.
Hydrogenated microcrystalline silicon (μc-Si:H) has become a material of increasing interest these last years mainly for its use in cost-effective production of tandem and triple junction thin film silicon based solar cells. Lately, the use of novel
Autor:
Linus Lofgren, Matthieu Despeisse, Gaetano Parascandolo, Christophe Ballif, Peter Cuony, Jordi Escarre-Palou, Corsin Battaglia, Simon Hänni, Michael Stuckelberger, Fanny Meillaud, Mathieu Charrière, Sylvain Nicolay, Adrian Billet, Grégory Bugnon, Laura Ding, Mathieu Boccard
Publikováno v:
2011 37th IEEE Photovoltaic Specialists Conference.
We report here on the latest research developments of tandem micromorph (amorphous/ microcrystalline) silicon solar cells in our laboratory. High conversion efficiency for micromorph cells requires both a dedicated light management to keep the absorb
Publikováno v:
Progress in Photovoltaics: Research and Applications.
We study the high-rate deposition of microcrystalline silicon in a large-area plasma-enhanced chemical-vapor-deposition (PECVD) reactor operated at 40.68 MHz, in the little-explored process conditions of high-pressure and high-silane concentration an
Autor:
Gaetano Parascandolo, R. Bartlome, Benjamin Strahm, Andrea Feltrin, T. Söderström, Christophe Ballif, Grégory Bugnon
Publikováno v:
Applied Physics Letters. 96:233508
The role of secondary gas-phase reactions during plasma-enhanced chemical vapor deposition of microcrystalline silicon is a controversial subject. In this paper, we show that the enhancement of such reactions is associated with the improvement of mat