Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Gael Blondel"'
Autor:
Frédéric Richardeau, Michael Chemin, Damien Risaletto, Gael Blondel, William Sanfins, Philippe Baudesson
Publikováno v:
Microelectronics Reliability. 55:1956-1960
Direct-lead-bonding (DLB) and wire-bonding, in epoxy-moulded package, are compared in terms of functional characteristics, failure-mode and post-fault high-current capability of a dual-chip power module (PM), with respect to I 2 T and critical energy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96bee4216885cd11e4c429e9d8749e17
https://doi.org/10.1016/j.microrel.2015.06.006
https://doi.org/10.1016/j.microrel.2015.06.006
Autor:
Richard Lallemand, Jean-Louis Blanchard, Jean-Michel Morelle, Gérard Coquery, Blaise Rouleau, Gael Blondel, Laurent Dupont
Publikováno v:
Microelectronics Reliability
Microelectronics Reliability, Elsevier, 2010, 50 (9-11), pp 1804-1809. ⟨10.1016/j.microrel.2010.07.127⟩
Microelectronics Reliability, Elsevier, 2010, 50 (9-11), pp 1804-1809. ⟨10.1016/j.microrel.2010.07.127⟩
Cost, weight and size reduction constrained designers of power electronic for micro hybrid vehicle to use power MOSFET under extreme conditions like avalanche mode. This paper shows the influence of the solder voids onto the die temperature distribut
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5b39f699b4a8fd4c2dfffb2a8afa41eb
https://doi.org/10.1016/j.microrel.2010.07.127
https://doi.org/10.1016/j.microrel.2010.07.127
Autor:
Michael Chemin, Damien Risaletto, Philippe Baudesson, Frédéric Richardeau, William Sanfins, Gael Blondel
Publikováno v:
2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe).
The Direct-Lead-Bonding (DLB) interconnection appears to be a promising technology for power-module (PM). Nevertheless, the absence of wire-fuse-effect in case of extreme failure, compared to classical wire-bonding, leads authors to rethink fail-safe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88e5293a11c874ea158394a80983d1ec
https://doi.org/10.1109/epe.2015.7309355
https://doi.org/10.1109/epe.2015.7309355
Publikováno v:
2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs.
The paper deals with the thermal behavior for paralleled MOSFET's module during accelerated cycling burn-in test in harsh ambient and current conditions. The aim of the work is to optimize the key parameters acting on the self-heating in order to avo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0fdea431e3e0b6f59b4642cc73d3dae7
https://doi.org/10.1109/ispsd.2011.5890867
https://doi.org/10.1109/ispsd.2011.5890867
Autor:
Sabrine Mrad, Philippe Masson, Gael Blondel, Philippe Dessante, Philippe Chiozzi, Michel Fakes, Pierre Lefranc
Publikováno v:
Proceedings of IECON'09 Annual Conference
IECON'09 Annual Conference of the IEEE Inductrial Electronics Society
IECON'09 Annual Conference of the IEEE Inductrial Electronics Society, Nov 2009, Porto, Portugal. pp.CD-Rom Proceedings
IECON'09 Annual Conference of the IEEE Inductrial Electronics Society
IECON'09 Annual Conference of the IEEE Inductrial Electronics Society, Nov 2009, Porto, Portugal. pp.CD-Rom Proceedings
The paper is about a so-called ”diffusive representation”, a new modeling dynamic systems method and its application to efficient transient thermal modeling of multichip power module taking into account thermal coupling effects. Compact thermal m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::15955c6085d59f17c9c3897b453a0bcc
https://hal-supelec.archives-ouvertes.fr/hal-00438640
https://hal-supelec.archives-ouvertes.fr/hal-00438640
Publikováno v:
2009 21st International Symposium on Power Semiconductor Devices & IC's.
The capability of 20V trench power MOSFETs to withstand high current repetitive avalanche events has been investigated. Automotive standard 20V BVdss rated MOSFETs with active area of 21mm2 have been successfully subjected with up to 300 million 59µ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35210a64b9847e2470b7a09233845fd9
https://doi.org/10.1109/ispsd.2009.5158014
https://doi.org/10.1109/ispsd.2009.5158014
Autor:
Patrick Lagonotte, Gael Blondel, Andre Piteau, Sonia Dhokkar, Philippe Masson, Jean-Claude Matt
Publikováno v:
EPE'2007
EPE'2007, Sep 2007, AALBORG, Denmark. pp.0294-EPE2007-FULL-17505310
EPE'2007, Sep 2007, AALBORG, Denmark. pp.0294-EPE2007-FULL-17505310
A novel non-destructive and non-contacting technique for the local temperature measurement of heat spot in electronic component is presented. Highly-sensitive lock-in near infrared (NIR) thermography is used to localize the heat spot induced temperat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c1ab6cabda4ad8e21592b79e5897e5a5
https://hal.archives-ouvertes.fr/hal-00380426
https://hal.archives-ouvertes.fr/hal-00380426