Zobrazeno 1 - 1
of 1
pro vyhledávání: '"Gae Won Lee"'
Step height removal mechanism of chemical mechanical planarization (CMP) for sub-nano-surface finish
Publikováno v:
Wear. 268:505-510
The step height reduction mechanism of chemical mechanical planarization (CMP) was studied to increase the removal rate of ceria (CeO2) abrasive, which is based on slurry application to high aspect ratio patterns. Four kinds of nano-abrasives at 0.5
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07f33f440773608d87cae20394e8dfdc
https://doi.org/10.1016/j.wear.2009.09.008
https://doi.org/10.1016/j.wear.2009.09.008
