Zobrazeno 1 - 10
of 41
pro vyhledávání: '"Gadelha, Andreij C."'
Autor:
Gadelha, Andreij C., Nadas, Rafael, Barbosa, Tiago C., Watanabe, Kenji, Taniguchi, Takashi, Campos, Leonardo C., Raschke, Markus B., Jorio, Ado
Due to its ultra-thin nature, the study of graphene quantum optoelectronics, like gate-dependent graphene Raman properties, is obscured by interactions with substrates and surroundings. For instance, the use of doped silicon with a capping thermal ox
Externí odkaz:
http://arxiv.org/abs/2207.09595
Autor:
Barbosa, Tiago C., Gadelha, Andreij C., Ohlberg, Douglas A. A., Watanabe, Kenji, Taniguchi, Takashi, Medeiros-Ribeiro, Gilberto, Jorio, Ado, Campos, Leonardo C.
In this work, we study the Raman spectra of twisted bilayer graphene samples as a function of their twist-angles ($\theta$), ranging from 0.03$^\circ$ to 3.40$^\circ$, where local $\theta$ are determined by analysis of their associated moire superlat
Externí odkaz:
http://arxiv.org/abs/2201.01762
Autor:
Gadelha, Andreij C., Nguyen, Viet-Hung, Neto, Eliel G., Santana, Fabiano, Raschke, Markus B., Lamparski, Michael, Meunier, Vincent, Charlier, Jean-Christophe, Jorio, Ado
Publikováno v:
Nano Letters (2022); published version contains some important corrections
The importance of phonons in the strong correlation phenomena observed in twisted bilayer graphene (TBG) at the so-called magic-angle is under debate. Here we apply gate-dependent micro-Raman spectroscopy to monitor the G band linewidth in TBG device
Externí odkaz:
http://arxiv.org/abs/2110.14916
Autor:
Ohlberg, Douglas A. A., Tami, Diego, Gadelha, Andreij C., Neto, Eliel G. S., Santana, Fabiano C., Miranda, Daniel, Avelino, Wellington, Watanabe, Kenji, Taniguchi, Takashi, Campos, Leonardo C., Ramirez, Jhonattan C., Rego, Cássio Gonçalves do, Jorio, Ado, Medeiros-Ribeiro, Gilberto
Molecular and atomic imaging required the development of electron and scanning probe microscopies to surpass the physical limits dictated by diffraction. Nano-infrared experiments and pico-cavity tip-enhanced Raman spectroscopy imaging later demonstr
Externí odkaz:
http://arxiv.org/abs/2007.03823
Autor:
Gadelha, Andreij C., Cadore, Alisson R., Watanabe, Kenji, Tanigushi, Takashi, de Paula, Ana M., Malard, Leandro M., Lacerda, Rodrigo G., Campos, Leonardo C.
Publikováno v:
2D Mater. 6 025036 (2019)
Non-volatile memory devices have been limited to flash architectures that are complex devices. Here, we present a unique photomemory effect in MoS$_2$ transistors. The photomemory is based on a photodoping effect - a controlled way of manipulating th
Externí odkaz:
http://arxiv.org/abs/2006.09986
Autor:
Gadelha, Andreij C., Cadore, Alisson R., Lafeta, Lucas, de Paula, Ana M., Malard, Leandro M., Lacerda, Rodrigo G., Campos, Leonardo C.
Publikováno v:
Nanotechnology 31 255701 (2020)
Inducing electrostatic doping in 2D materials by laser exposure (photodoping effect) is an exciting route to tune optoelectronic phenomena. However, there is a lack of investigation concerning in what respect the action of photodoping in optoelectron
Externí odkaz:
http://arxiv.org/abs/2006.09513
Autor:
Gadelha, Andreij C., Ohlberg, Douglas A. A., Rabelo, Cassiano, Neto, Eliel G. S., Vasconcelos, Thiago L., Campos, João L., Lemos, Jessica S., Ornelas, Vinícius, Miranda, Daniel, Nadas, Rafael, Santana, Fabiano C., Watanabe, Kenji, Taniguchi, Takashi, van Troeye, Benoit, Lamparski, Michael, Meunier, Vincent, Nguyen, Viet-Hung, Paszko, Dawid, Charlier, Jean-Christophe, Campos, Leonardo C., Cançado, Luiz G., Medeiros-Ribeiro, Gilberto, Jorio, Ado
A low twist angle between the two stacked crystal networks in bilayer graphene enables self-organized lattice reconstruction with the formation of a periodic domain. This superlattice modulates the vibrational and electronic structures, imposing new
Externí odkaz:
http://arxiv.org/abs/2006.09482
Autor:
Rezende, Natália P., Cadore, Alisson R., Gadelha, Andreij C., Pereira, Cíntia L., Ornelas, Vinicius, Watanabe, Kenji, Taniguchi, Takashi, Ferlauto, André S., Malachias, Ângelo, Campos, Leonardo C., Lacerda, Rodrigo G.
Publikováno v:
Advanced Electronic Materials, 2019
This work presents a detailed experimental investigation of the interaction between molecular hydrogen (H$_2$) and monolayer MoS$_2$ field effect transistors (MoS$_2$ FET), aiming for sensing application. The MoS$_2$ FET exhibits a response to H$_2$
Externí odkaz:
http://arxiv.org/abs/2003.02352
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Akademický článek
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