Výsledky vyhledávání - "Gabrysch, Markus"

Report

A valleytronic diamond transistor: electrostatic control of valley-currents and charge state manipulation of NV centers

Autor: Suntornwipat, Nattakarn, Majdi, Saman, Gabrysch, Markus, Kovi, Kiran Kumar, Djurberg, Viktor, Friel, Ian, Twitchen, Daniel J., Isberg, Jan

The valley degree of freedom in many-valley semiconductors provides a new paradigm for storing and processing information in valleytronic and quantum-computing applications. Achieving practical devices require all-electric control of long-lived valle

Externí odkaz: http://arxiv.org/abs/2009.08711

Zobrazit plný text záznamu

Report

Observation of transferred-electron oscillations in diamond

Autor: Suntornwipat, Nattakarn, Majdi, Saman, Gabrysch, Markus, Friel, Ian, Isberg, Jan

The transferred-electron oscillator (TEO) is a device used in microwave applications that utilizes the negative differential mobility (NDM) effect to generate continuous oscillations. Recently, NDM was observed in intrinsic single-crystalline chemica

Externí odkaz: http://arxiv.org/abs/1908.09566

Zobrazit plný text záznamu

Dissertation/ Thesis

Charge Transport in Single-crystalline CVD Diamond

Autor: Gabrysch, Markus

Diamond is a semiconductor with many superior material properties such as high breakdown field, high saturation velocity, high carrier mobilities and the highest thermal conductivity of all materials. These extreme properties, as compared to other (w

Externí odkaz: http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-122794

Zobrazit plný text záznamu

Report

Stability of Polarized States for Diamond Valleytronics

Autor: Hammersberg, Johan, Majdi, Saman, Kovi, Kiran Kumar, Suntornwipat, Nattakarn, Gabrysch, Markus, Twitchen, Daniel. J., Isberg, Jan

The stability of valley polarized electron states is crucial for the development of valleytronics. A long relaxation time of the valley polarization is required to enable operations to be performed on the polarized states. Here we investigate the sta

Externí odkaz: http://arxiv.org/abs/1403.8073

Zobrazit plný text záznamu

Report

Silicon Oxide Passivation of Single-Crystalline CVD Diamond Evaluated by the Time-of-Flight Technique

Autor: Kovi, Kiran Kumar, Majdi, Saman, Gabrysch, Markus, Isberg, Jan

The excellent material properties of diamond make it highly desirable for many extreme electronic applications that are out of reach of conventional electronic materials. For commercial diamond devices to become a reality, it is necessary to have an

Externí odkaz: http://arxiv.org/abs/1401.5385

Zobrazit plný text záznamu