Zobrazeno 1 - 10
of 67
pro vyhledávání: '"Gabriele Navarro"'
Autor:
C. Sabbione, Jean-Paul Barnes, Emmanuel Nolot, Gabriele Navarro, Agnès Tempez, Sebastien Legendre, Yann Mazel
Publikováno v:
Surface and Interface Analysis. 52:895-899
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3779d3953d05f81a29f15ab96d3725e
https://doi.org/10.1002/sia.6823
https://doi.org/10.1002/sia.6823
Autor:
A. Roule, W. Pessoa, C. Sabbione, Catia Costa, Chris Jeynes, Emmanuel Nolot, Gabriele Navarro, M. Mantler, F. Pierre
Publikováno v:
Journal of Analytical Atomic Spectrometry. 35:701-712
We have calibrated on-site WD-XRF (wavelength-dispersive X-ray fluorescence) measurements of GeSbTe:N (GST:N) stoichiometry with off-site accurate ion beam analysis (IBA). N is determined by elastic backscattering spectrometry (EBS) using the resonan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8906f09c42d512d55fd5eec1d87125ba
https://doi.org/10.1039/c9ja00382g
https://doi.org/10.1039/c9ja00382g
Autor:
Camille Laguna, Mathieu Bernard, Frederic Fillot, Denis Rouchon, Nevine Rochat, Julien Garrione, Lucie Prazakova, Emmanuel Nolot, Valentina Meli, Niccolo Castellani, Simon Martin, Chiara Sabbione, Guillaume Bourgeois, Marie-Claire Cyrille, Liviu Militaru, Abdelkader Souifi, Francois Andrieu, Gabriele Navarro
Publikováno v:
IEEE Transactions on Electron Devices
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c3db138f27cecd4f37e3ce99ddea1996
Autor:
A. Jannaud, Marianne Coig, J. Garrione, Mathieu Bernard, Marie-Claire Cyrille, F. Al Mamun, F. Mazen, B. Hemard, T. Magis, C. Socquet-Clerc, Gabriele Navarro, V. Meli, Guillaume Bourgeois, Emmanuel Nolot, Francois Andrieu, N. Bernier, J. P. Barnes, Eugénie Martinez, N. Castellani, C. Charpin, F. Milesi, C. Sabbione, F. Laulagnet
Publikováno v:
Microelectronics Reliability
Microelectronics Reliability, In press, ⟨10.1016/j.microrel.2021.114221⟩
Microelectronics Reliability, Elsevier, In press, ⟨10.1016/j.microrel.2021.114221⟩
Microelectronics Reliability, In press, ⟨10.1016/j.microrel.2021.114221⟩
Microelectronics Reliability, Elsevier, In press, ⟨10.1016/j.microrel.2021.114221⟩
International audience; In this paper we investigate the effect of Carbon ion implantation in Ge$_2$ Sb$_2$ Te$_5$ based Phase-Change Memory (PCM) targeting reliability improvement in 4kb memory arrays. We show how ion implantation by beam line allow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::70e57736ecd498b80119d3cb144b5aed
https://hal-cea.archives-ouvertes.fr/cea-03373794
https://hal-cea.archives-ouvertes.fr/cea-03373794
Autor:
Ludovic Goffart, Bernard Pelissier, Gauthier Lefevre, Gabriele Navarro, Christophe Vallée, Yannick Le Friec, Jean–Philippe Reynard
Publikováno v:
Applied Surface Science
Applied Surface Science, Elsevier, 2021, pp.151514. ⟨10.1016/j.apsusc.2021.151514⟩
Applied Surface Science, 2021, pp.151514. ⟨10.1016/j.apsusc.2021.151514⟩
Applied Surface Science, Elsevier, 2021, pp.151514. ⟨10.1016/j.apsusc.2021.151514⟩
Applied Surface Science, 2021, pp.151514. ⟨10.1016/j.apsusc.2021.151514⟩
Phase-Change Memory technology is increasing in maturity and in interest for next generation of non-volatile memory applications. In order to take advantage of the properties of innovative phase-change layers such as Ge-rich GST alloys, the understan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f8dda7814fc6059f550a48e642a2d68f
https://hal.archives-ouvertes.fr/hal-03388467
https://hal.archives-ouvertes.fr/hal-03388467
Autor:
A. Jannaud, Jyh-Miin Lin, Zineb Saghi, Guido Mula, Gabriele Navarro, Philippe Ciuciu, Martin Jacob, Pascale Bayle-Guillemaud, Loubna El Gueddari
Publikováno v:
Ultramicroscopy
Ultramicroscopy, 2021, 225, pp.113289. ⟨10.1016/j.ultramic.2021.113289⟩
Ultramicroscopy, Elsevier, 2021, 225, pp.113289. ⟨10.1016/j.ultramic.2021.113289⟩
Ultramicroscopy, 2021, 225, pp.113289. ⟨10.1016/j.ultramic.2021.113289⟩
Ultramicroscopy, Elsevier, 2021, 225, pp.113289. ⟨10.1016/j.ultramic.2021.113289⟩
Electron tomography is widely employed for the 3D morphological characterization at the nanoscale. In recent years, there has been a growing interest in analytical electron tomography (AET) as it is capable of providing 3D information about the eleme
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::04b9e30ae0c4200fe83a004be419fe71
https://inria.hal.science/hal-03366105
https://inria.hal.science/hal-03366105
Autor:
J. Garrione, Marie-Claire Cyrille, Nicolas Bernier, G. Lama, N. Castellani, Gabriele Navarro, Emmanuel Nolot, Etienne Nowak, Mathieu Bernard, Guillaume Bourgeois
Publikováno v:
IRPS 2021-2021 IEEE International Reliability Physics Symposium
IRPS 2021-2021 IEEE International Reliability Physics Symposium, Mar 2021, Monterey, United States. pp.1-6, ⟨10.1109/IRPS46558.2021.9405116⟩
IRPS
2021 IEEE International Reliability Physics Symposium (IRPS)
IRPS 2021-2021 IEEE International Reliability Physics Symposium, Mar 2021, Monterey, United States. pp.1-6, ⟨10.1109/IRPS46558.2021.9405116⟩
IRPS
2021 IEEE International Reliability Physics Symposium (IRPS)
Phase-Change Memory (PCM) demonstrated to be a mature Non- Volatile Memory technology to address Storage Class Memory (SCM) applications that can be distinguished in memory-type (M-SCM) and storage-type (S-SCM). In this work, we present how aGeSbTe (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0536207a1fd4b18652fc5be16bd08df3
https://cea.hal.science/cea-03331482
https://cea.hal.science/cea-03331482
Autor:
Charlotte Frenkel, Elisa Vianello, Giacomo Indiveri, Yigit Demirag, Gabriele Navarro, Filippo Moro, Melika Payvand, Thomas Dalgaty
Publikováno v:
2021 IEEE International Symposium on Circuits and Systems (ISCAS)
ISCAS
ISCAS
Dedicated hardware implementations of spiking neural networks that combine the advantages of mixed-signal neuromorphic circuits with those of emerging memory technologies have the potential of enabling ultra-low power pervasive sensory processing. To
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9cb0d8693be3f6717c5b1c920dd5f89c
http://arxiv.org/abs/2102.07260
http://arxiv.org/abs/2102.07260
Autor:
Gauthier Lefevre, C. Sabbione, Sylvain David, Etienne Nowak, J. Garrione, N. Castellani, Marie-Claire Cyrille, Anna Lisa Serra, Nicolas Bernier, Christophe Vallée, Guillaume Bourgeois, Gabriele Navarro, Mathieu Bernard, O. Cueto, Christelle Charpin-Nicolle
Publikováno v:
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2021, 68 (2), pp.535-540. ⟨10.1109/TED.2020.3044267⟩
IEEE Transactions on Electron Devices, 2021, 68 (2), pp.535-540. ⟨10.1109/TED.2020.3044267⟩
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2021, 68 (2), pp.535-540. ⟨10.1109/TED.2020.3044267⟩
IEEE Transactions on Electron Devices, 2021, 68 (2), pp.535-540. ⟨10.1109/TED.2020.3044267⟩
International audience; In this paper, we demonstrate at array level and in industrial like devices, the extreme scaling down to nanometric dimensions of the Phase-Change Memory technology thanks to an innovative Self-Nano-Confined PCM device (SNC PC
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a85ded2bac29098bfe311f43f120a78b
https://hal-cea.archives-ouvertes.fr/cea-03119677/document
https://hal-cea.archives-ouvertes.fr/cea-03119677/document
Autor:
Elisa Vianello, Gabriele Navarro, T. Magis, Marc Bocquet, Joel Minguet Lopez, Laurent Grenouillet, Gabriel Molas, Francois Andrieu, Damien Deleruyelle, Lucas Reganaz, Manon Dampfhoffer, Tifenn Hirtzlin, C. Carabasse, Jean-Michel Portal
Publikováno v:
Semiconductor Science and Technology
Semiconductor Science and Technology, 2021, 37 (1), pp.014001. ⟨10.1088/1361-6641/ac31e2⟩
Semiconductor Science and Technology, IOP Publishing, 2021, 37 (1), pp.014001. ⟨10.1088/1361-6641/ac31e2⟩
Semiconductor Science and Technology, 2021, 37 (1), pp.014001. ⟨10.1088/1361-6641/ac31e2⟩
Semiconductor Science and Technology, IOP Publishing, 2021, 37 (1), pp.014001. ⟨10.1088/1361-6641/ac31e2⟩
Low-power memristive devices embedded on graphics or central processing units logic core are a very promising non-von-Neumann approach to improve significantly the speed and power consumption of deep learning accelerators, enhancing their deployment
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f44aef14307fb8e41806407eb922f8a2